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DNBT8105 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 1A NPN SURFACE MOUNT TRANSISTOR - Diodes Incorporated

भाग संख्या DNBT8105
समारोह 1A NPN SURFACE MOUNT TRANSISTOR
मैन्युफैक्चरर्स Diodes Incorporated 
लोगो Diodes Incorporated लोगो 
पूर्व दर्शन
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DNBT8105 pdf
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Symbol Min
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICES
IEBO
80
60
5
¾
¾
¾
hFE
VCE(SAT)
VBE(SAT)
VBE(ON)
100
100
80
30
¾
¾
¾
¾
Cobo
fT
¾
150
Max
¾
¾
¾
100
100
100
¾
300
¾
¾
0.25
0.5
1.1
1.0
10
¾
Note: 4. Short duration pulse test used to minimize self-heating effect.
Unit Test Condition
V IC = 100mA, IE = 0
V IC = 10mA, IB = 0
V IE = 100mA, IC = 0
nA VCB = 60V, IE = 0
nA VCES = 60V
nA VEB = 4V, IC = 0
IC = 1mA, VCE = 5V
V
IC = 500mA, VCE = 5V
IC = 1A, VCE = 5V
IC = 2A, VCE = 5V
V
IC = 500mA, IB = 50mA
IC = 1A, IB = 100mA
V IC = 1A, IB = 100mA
V IC = 1A, VCE = 5V
pF
MHz
VCB = 10V, f = 1.0MHz
VCE = 10V, IC = 50mA,
f = 100MHz
Typical Characteristics @ TA = 25°C unless otherwise specified
400
Note 1
350
300
250
200
150
100
50
0
0 25 50 75 100 125 150 175 200
TA, AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs
Ambient Temperature
350
300
TA = 125ºC
VCE = 5V
250
TA = 85ºC
200
150
TA = 25ºC
100
50
TA = -55ºC
0
1
10
100
1000
10,000
IC, COLLECTOR CURRENT (mA)
Fig. 2, DC Current Gain vs. Collector Current
DS30513 Rev. 7 - 2
2 of 4
www.diodes.com
DNBT8105

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