DataSheet.in

IRG4PC50UDPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

भाग संख्या IRG4PC50UDPBF
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
1 Page
		
<?=IRG4PC50UDPBF?> डेटा पत्रक पीडीएफ

IRG4PC50UDPBF pdf
IRG4PC50UDPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown VoltageS 600 ---- ---- V VGE = 0V, IC = 250µA
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage ---- 0.60 ---- V/°C VGE = 0V, IC = 1.0mA
VCE(on)
Collector-to-Emitter Saturation Voltage ---- 1.65 2.0
IC = 27A
VGE = 15V
---- 2.0 ---- V IC = 55A
See Fig. 2, 5
---- 1.6 ----
IC = 27A, TJ = 150°C
VGE(th)
Gate Threshold Voltage
3.0 ---- 6.0
VCE = VGE, IC = 250µA
VGE(th)/TJ Temperature Coeff. of Threshold Voltage ---- -13 ---- mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance T 16 24 ---- S VCE = 100V, IC = 27A
ICES
Zero Gate Voltage Collector Current
---- ---- 250 µ A VGE = 0V, VCE = 600V
---- ---- 6500
VGE = 0V, VCE = 600V, TJ = 150°C
VFM Diode Forward Voltage Drop
---- 1.3 1.7 V IC = 25A
See Fig. 13
---- 1.2 1.5
IC = 25A, TJ = 150°C
IGES Gate-to-Emitter Leakage Current ---- ---- ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
Min. Typ. Max. Units
---- 180 270
---- 25 38 nC
---- 61 90
---- 46 ----
---- 25 ---- ns
---- 140 230
---- 74 110
---- 0.99 ----
---- 0.59 ---- mJ
---- 1.58 1.9
---- 44 ----
---- 27 ---- ns
---- 240 ----
---- 130 ----
---- 2.3 ---- mJ
---- 13 ---- nH
---- 4000 ----
---- 250 ---- pF
---- 52 ----
---- 50 75 ns
---- 105 160
---- 4.5 10 A
---- 8.0 15
---- 112 375 nC
---- 420 1200
---- 250 ---- A/µs
---- 160 ----
Conditions
IC = 27A
VCC = 400V
See Fig. 8
VGE = 15V
TJ = 25°C
IC = 27A, VCC = 480V
VGE = 15V, RG = 5.0
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 11, 18
TJ = 150°C, See Fig. 9, 10, 11, 18
IC = 27A, VCC = 480V
VGE = 15V, RG = 5.0
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
VGE = 0V
VCC = 30V
ƒ = 1.0MHz
See Fig. 7
TJ = 25°C See Fig.
TJ = 125°C 14
TJ = 25°C See Fig.
TJ = 125°C 15
TJ = 25°C See Fig.
TJ = 125°C
16
TJ = 25°C
TJ = 125°C
IF = 25A
VR = 200V
di/dt 200A/µs
2 www.irf.com

विन्यास 10 पेज
डाउनलोड[ IRG4PC50UDPBF Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IRG4PC50UDPBFINSULATED GATE BIPOLAR TRANSISTORInternational Rectifier
International Rectifier


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English