DataSheet.in

IRFI4024H-117P डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - DIGITAL AUDIO MOSFET - International Rectifier

भाग संख्या IRFI4024H-117P
समारोह DIGITAL AUDIO MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
1 Page
		
<?=IRFI4024H-117P?> डेटा पत्रक पीडीएफ

IRFI4024H-117P pdf
IRFI4024H-117P
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) g
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
∆ΒVDSS/TJ
RDS(on)
VGS(th)
VGS(th)/TJ
IDSS
IGSS
gfs
Qg
Qgs1
Qgs2
Qgd
Qgodr
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
55 ––– ––– V VGS = 0V, ID = 250µA
––– 54 ––– mV/°C Reference to 25°C, ID = 1mA
––– 48
60 mVGS = 10V, ID = 7.7A e
2.0 ––– 4.0
V VDS = VGS, ID = 25µA
––– -9.17 ––– mV/°C
––– ––– 20 µA VDS = 55V, VGS = 0V
––– ––– 250
VDS = 55V, VGS = 0V, TJ = 125°C
––– ––– 200 nA VGS = 20V
––– ––– -200
VGS = -20V
6.5 ––– ––– S VDS = 25V, ID = 7.7A
––– 8.9 13
––– 1.6 –––
––– 0.77 –––
––– 3.5 –––
––– 3.0 –––
VDS = 44V
nC VGS = 10V
ID = 7.7A
See Fig. 6 and 15
Qsw
RG(int)
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
LD
Switch Charge (Qgs2 + Qgd)
Internal Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
––– 4.3 –––
––– 2.3 –––
––– 5.9 –––
––– 2.0 –––
––– 13 –––
––– 3.4 –––
––– 320 –––
––– 47 –––
––– 31 –––
––– 4.5 –––
VDD = 28V, VGS = 10V e
ID = 7.7A
ns RG = 2.5
VGS = 0V
pF VDS = 50V
ƒ = 1.0MHz,
Between lead,
See Fig. 5
D
nH 6mm (0.25in.)
LS Internal Source Inductance
––– 7.5 –––
from package
G
and center of die contact
S
Diode Characteristics g
Parameter
IS @ TC = 25°C Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) c
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
17
11
Max. Units
Conditions
11 MOSFET symbol
D
A showing the
44
integral reverse
G
p-n junction diode.
S
1.3 V TJ = 25°C, IS = 7.7A, VGS = 0V e
26 ns TJ = 25°C, IF = 7.7A
17 nC di/dt = 100A/µs e
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting TJ = 25°C, L = 0.25mH, RG = 25, IAS = 7.7A.
ƒ Pulse width 400µs; duty cycle 2%.
„ Rθ is measured at TJ of approximately 90°C.
… Specifications refer to single MosFET.
2
www.irf.com

विन्यास 6 पेज
डाउनलोड[ IRFI4024H-117P Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IRFI4024H-117PDIGITAL AUDIO MOSFETInternational Rectifier
International Rectifier


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English