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HN1B01FDW1T1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount - ON Semiconductor

भाग संख्या HN1B01FDW1T1
समारोह Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount
मैन्युफैक्चरर्स ON Semiconductor 
लोगो ON Semiconductor लोगो 
पूर्व दर्शन
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HN1B01FDW1T1 pdf
HN1B01FDW1T1
Q1: PNP
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Collector−Emitter Breakdown Voltage
(IC = 2.0 mAdc, IB = 0)
Collector−Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
Emitter−Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector−Base Cutoff Current
(VCB = 45 Vdc, IE = 0)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
Collector−Emitter Cutoff Current
(VCE = 10 Vdc, IB = 0)
(VCE = 30 Vdc, IB = 0)
(VCE = 30 Vdc, IB = 0, TA = 80°C)
DC Current Gain (Note 1)
(VCE = 6.0 Vdc, IC = 2.0 mAdc)
Collector−Emitter Saturation Voltage
(IC = 100 mAdc, IB = 10 mAdc)
ICEO
hFE
VCE(sat)
Q2: NPN
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Collector−Emitter Breakdown Voltage
(IC = 2.0 mAdc, IB = 0)
V(BR)CEO
Collector−Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
V(BR)CBO
Emitter−Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
Collector−Base Cutoff Current
(VCB = 45 Vdc, IE = 0)
ICBO
Collector−Emitter Cutoff Current
(VCE = 10 Vdc, IB = 0)
(VCE = 30 Vdc, IB = 0)
(VCE = 30 Vdc, IB = 0, TA = 80°C)
DC Current Gain (Note 1)
(VCE = 6.0 Vdc, IC = 2.0 mAdc)
ICEO
hFE
Collector−Emitter Saturation Voltage
(IC = 100 mAdc, IB = 10 mAdc)
1. Pulse Test: Pulse Width 300 ms, D.C. 2%.
VCE(sat)
Min
−50
−60
−7.0
−200
−0.15
Min
50
60
7.0
200
0.15
Max
−0.1
−0.1
−2.0
−1.0
−400
−0.3
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
mAdc
mAdc
Vdc
Max Unit
− Vdc
− Vdc
− Vdc
0.1 mAdc
0.1 mAdc
2.0 mAdc
1.0 mAdc
400 −
0.25 Vdc
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भाग संख्याविवरणविनिर्माण
HN1B01FDW1T1Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface MountON Semiconductor
ON Semiconductor


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