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EML12 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - General purpose transistor - Rohm

भाग संख्या EML12
समारोह General purpose transistor
मैन्युफैक्चरर्स Rohm 
लोगो Rohm लोगो 
पूर्व दर्शन
1 Page
		
<?=EML12?> डेटा पत्रक पीडीएफ

EML12 pdf
Transistors
zAbsolute maximum ratings (Ta=25°C)
Di1
Parameter
Symbol
Average revtified forward current
IO
Forward current surge peak (60Hz, 1) IFSM
Reverse voltage (DC)
VR
Junction temperature
Tj
Limits
200
1
30
125
Unit
mA
A
V
°C
Tr2
Parameter
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current
IC
Power dissipation
PD
Junction temperature
Tj
Each terminal mount on a recommended.
Limits
60
50
7
150
120
150
Unit
V
V
V
mA
mW
°C
Di1 / DTr2
Parameter
Symbol
Power dissipation
Pd
Storage temperature
Tstg
Each terminal mount on a recommended.
Limits
150
55 to +125
Unit
mW
°C
EML12 / UML12N
zElectrical characteristics (Ta=25°C)
Di1
Parameter
Symbol
Forward voltage
VF
Reverse current
IR
Min. Typ. Max. Unit
Conditions
0.40 0.50 V IF=200mA
4.0 30 µA VR=10V
Tr2
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage BVCBO 60 − − V IC=50µA
Collector-emitter breakdown voltage BVCEO 50 − − V IC=1mA
Emitter-base breakdown voltage
BVEBO 7 − − V IE=50µA
Collector cutoff current
ICBO − − 0.1 µA VCB=60V
Emitter cutoff current
IEBO − − 0.1 µA VEB=7V
Collector-emitter saturation voltage VCE (sat) − − 0.4 V IC/IB=50mA/5mA
DC current transfer ratio
hFE 180 390 VCE=6V, IC=1mA
Transition frequency
fT 180 MHz VCE=12V, IE=2mA, f=100MHz
Output capacitance
Cob 2 3.5 PF VCB=12V, IE=0A, f=1MHz
Rev.A
2/4

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डाउनलोड[ EML12 Datasheet.PDF ]


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