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IXKG25N80C डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - CoolMOS Power MOSFET ISO264 - IXYS Corporation

भाग संख्या IXKG25N80C
समारोह CoolMOS Power MOSFET ISO264
मैन्युफैक्चरर्स IXYS Corporation 
लोगो IXYS Corporation लोगो 
पूर्व दर्शन
1 Page
		
<?=IXKG25N80C?> डेटा पत्रक पीडीएफ

IXKG25N80C pdf
IXKG 25N80C
Symbol
Qg(on)
Qgs
Qgd
td(on)
tr
td(off)
tf
RthJC
RthCH
Test Conditions
Characteristic Values ISO264 OUTLINE
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 10 V, VDS = 640 V, ID = 17 A
166 nC
18 nC
84 nC
VGS = 10 V, VDS = 640V
ID = 35 A, RG = 2.2
25 ns
25 ns
75 ns
10 ns
0.5 K/W
0.30 K/W
Reverse Conduction
Symbol
Test Conditions
VSD INF o=te121.5 A, VGS = 0 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
1 1.2 V
Note: 1. Pulse test, t 300 µs, duty cycle d 2 %
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - No Connection
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
4,835,592 4,881,106 5,017,508
4,850,072 4,931,844 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1 6,259,123B1
6,404,065B1 6,162,665

विन्यास 2 पेज
डाउनलोड[ IXKG25N80C Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXKG25N80CCoolMOS Power MOSFET ISO264IXYS Corporation
IXYS Corporation


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