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IRGS4065PBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - (IRGS4065PBF / IRGB4065PBF) PDP TRENCH IGBT - International Rectifier

भाग संख्या IRGS4065PBF
समारोह (IRGS4065PBF / IRGB4065PBF) PDP TRENCH IGBT
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
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<?=IRGS4065PBF?> डेटा पत्रक पीडीएफ

IRGS4065PBF pdf
IRGB/S4065PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVCES
∆ΒVCES/TJ
Collector-to-Emitter Breakdown Voltage
Breakdown Voltage Temp. Coefficient
300
–––
–––
–––
0.23
1.20
–––
–––
1.40
V
V/°C
VGE = 0V, ICE = 1.0 mA
Reference to 25°C, ICE = 1.0 mA
VGE = 15V, ICE = 25A e
––– 1.35 –––
VGE = 15V, ICE = 40A e
VCE(on)
Static Collector-to-Emitter Voltage
––– 1.75 2.10 V VGE = 15V, ICE = 70A e
––– 2.35 –––
VGE = 15V, ICE = 120A e
––– 2.00 –––
VGE = 15V, ICE = 70A, TJ = 150°C
VGE(th)
Gate Threshold Voltage
2.6 ––– 5.0
V VCE = VGE, ICE = 500µA
VGE(th)/TJ
ICES
Gate Threshold Voltage Coefficient
Collector-to-Emitter Leakage Current
––– -11 ––– mV/°C
––– 2.0 25 µA VCE = 300V, VGE = 0V
––– 50 –––
VCE = 300V, VGE = 0V, TJ = 150°C
IGES
Gate-to-Emitter Forward Leakage
––– ––– 100 nA VGE = 30V
Gate-to-Emitter Reverse Leakage
––– ––– -100
VGE = -30V
gfe Forward Transconductance
Qg Total Gate Charge
––– 26 ––– S VCE = 25V, ICE = 25A
––– 62 ––– nC VCE = 200V, IC = 25A, VGE = 15V
Qgc Gate-to-Collector Charge
td(on)
Turn-On delay time
––– 20 –––
— 30 —
See Fig. 14
IC = 25A, VCC = 180V
tr Rise time
— 26 — ns RG = 10, L=200µH, LS= 150nH
td(off)
Turn-Off delay time
— 170 —
TJ = 25°C
tf Fall time
— 160 —
td(on)
Turn-On delay time
— 30 —
IC = 25A, VCC = 180V
tr Rise time
— 28 — ns RG = 10, L=200µH, LS= 150nH
td(off)
Turn-Off delay time
— 250 —
TJ = 150°C
tf Fall time
— 310 —
tst
EPULSE
Ciss
Coss
Shoot Through Blocking Time
Energy per Pulse
Input Capacitance
Output Capacitance
100 ––– –––
––– 875 –––
––– 975 –––
––– 2200 –––
––– 110 –––
ns VCC = 240V, VGE = 15V, RG= 5.1
L = 220nH, C= 0.40µF, VGE = 15V
µJ VCC = 240V, RG= 5.1Ω, TJ = 25°C
L = 220nH, C= 0.40µF, VGE = 15V
VCC = 240V, RG= 5.1Ω, TJ = 100°C
VGE = 0V
pF VCE = 30V
Crss
Reverse Transfer Capacitance
––– 55 –––
ƒ = 1.0MHz,
See Fig.13
LC
Internal Collector Inductance
––– 5.0 –––
Between lead,
nH 6mm (0.25in.)
LE Internal Emitter Inductance
––– 13 –––
from package
and center of die contact
Notes:
 Half sine wave with duty cycle = 0.25, ton=1µsec.
‚ Rθ is measured at TJ of approximately 90°C.
ƒ Pulse width 400µs; duty cycle 2%.
2
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डाउनलोड[ IRGS4065PBF Datasheet.PDF ]


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IRGS4065PBF(IRGS4065PBF / IRGB4065PBF) PDP TRENCH IGBTInternational Rectifier
International Rectifier


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