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IRFE330 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - REPETITIVE AVALANCHE AND dv/dt RATED - International Rectifier

भाग संख्या IRFE330
समारोह REPETITIVE AVALANCHE AND dv/dt RATED
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRFE330?> डेटा पत्रक पीडीएफ

IRFE330 pdf
IRFE330, JANTX-, JANTXV-, 2N6800U Device
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source
On-State Resistance
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
LS
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Min
400
2.0
2.4
Typ Max Units
—— V
0.35 — V/°C
Test Conditions
VGS =0 V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
— 1.0
— 1.15
VGS = 10V, ID = 2.0A 
VGS = 10V, ID = 3.0A
— 4.0 V
VDS = VGS, ID = 250µA
— — S( )
VDS > 15V, IDS = 2.0A 
25
250
µA
VDS= 0.8 x Max Rating,VGS=0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
— 100
— -100 nA
VGS = 20 V
VGS = -20V
— 33
VGS = 10V, ID = 3.0A
— 5.8 nC
VDS = Max Rating x 0.5
— 17
— 30
— 35
— 55 ns
VDD = 200V, ID = 3.0A,
RG = 7.5
— 35
1.8 —
4.3 —
nH
Measured from drain pad to Modified MOSFET symbol show-
die. ing the internal inductances.
Measured from center of
source pad to the end of
source bonding wire.
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
— 660 —
— 190 —
— 68 —
pF
VGS = 0V, VDS = 25 V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS Continuous Source Current (Body Diode)
ISM Pulse Source Current (Body Diode) Œ
— — 3.0
— — 12
A Modified MOSFET symbol
showing the integral reverse
p-n junction rectifier.
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
— — 1.4 V Tj = 25°C, IS = 3.0A, VGS = 0V 
— — 700 ns Tj = 25°C, IF = 3.0A, di/dt 100A/µs
— — 6.2 µC
VDD 50V 
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
Junction-to-Case
RthJPCB Junction-to-PC Board
Min Typ Max Units
— — 5.0
K/W 
— — 19
Test Conditions
Soldered to a copper clad PC board
Details of notes  through … are on the last page
2
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IRFE330REPETITIVE AVALANCHE AND dv/dt RATEDInternational Rectifier
International Rectifier


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