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IRFE310 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - HEXFET TRANSISTOR - International Rectifier

भाग संख्या IRFE310
समारोह HEXFET TRANSISTOR
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRFE310?> डेटा पत्रक पीडीएफ

IRFE310 pdf
IRFE310, JANTX-, JANTXV-, 2N6786U Devices
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min
400
2.0
0.87
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
LS Internal Source Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Typ Max Units
—— V
0.37 — V/°C
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
— 3.6
VGS = 10V, ID = 0.8A „
— 3.7
VGS = 10V, ID = 1.25A
— 4.0 V
VDS = VGS, ID = 250µA
— — S( )
VDS > 15V, IDS = 0.8A „
25
250
µA
VDS= 0.8 x Max Rating,VGS=0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
— 100
— -100 nA
VGS = 20V
VGS = -20V
— 8.4
VGS = 10V, ID = 1.25A
— 1.6 nC
VDS = Max Rating x 0.5
— 5.0
— 15
— 20
— 35 ns
VDD = 15V, ID = 1.25A,
RG = 7.5
— 30
5.0 —
15 —
nH
Measured from drain Modified MOSFET sym-
lead, 6mm (0.25 in) bol showing the internal
from package to center inductances.
of die.
Measured from source
lead, 6mm (0.25 in)
from package to
source bonding pad.
190 —
65 —
pF
VGS = 0V, VDS = 25V
f = 1.0MHz
24 —
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS Continuous Source Current (Body Diode) — — 1.25 A Modified MOSFET symbol
ISM Pulse Source Current (Body Diode) 
— — 5.5
showing the integral reverse
p-n junction rectifier.
VSD Diode Forward Voltage
trr Reverse Recovery Time
QRR Reverse Recovery Charge
— — 1.4 V
Tj = 25°C, IS = 1.25A, VGS = 0V „
— — 540 ns Tj = 25°C, IF = 1.25A, di/dt 100A/µs
— — 4.5 µC
VDD 50V „
ton Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJ-PCB
Junction-to-Case
Junction-to-PC board
Min Typ Max Units
Test Conditions
— — 8.3
— — 27 °C/W soldered to a copper-clad PC board
2 www.irf.com

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डाउनलोड[ IRFE310 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IRFE310HEXFET TRANSISTORInternational Rectifier
International Rectifier


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