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IXKC40N60C डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - CoolMOS Power MOSFET - IXYS Corporation

भाग संख्या IXKC40N60C
समारोह CoolMOS Power MOSFET
मैन्युफैक्चरर्स IXYS Corporation 
लोगो IXYS Corporation लोगो 
पूर्व दर्शन
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<?=IXKC40N60C?> डेटा पत्रक पीडीएफ

IXKC40N60C pdf
IXKC 40N60C
Symbol
Qg(on)
Qgs
Qgd
td(on)
tr
td(off)
tf
RthJC
RthCH
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 10 V, VDS = 350 V, ID = 40 A
VGS = 10 V, VDS = 380V
ID = 40 A, RG = 1.8
158 nC
42 nC
92 nC
20 ns
55 ns
60 ns
10 ns
0.5 K/W
0.30 K/W
Reverse Correction
Symbol
Test Conditions
VSD IF = 20 A, VGS = 0 V
Note 3
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
0.8 1.2 V
Note: 1. MOSFET chip capability
2. Intrinsic diode capability
3. Pulse test, t 300 µs, duty cycle d 2 %
ISOPLUS220 OUTLINE
Note: All terminals are solder plated.
1 - Gate
2 - Drain
3 - Source
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025

विन्यास 2 पेज
डाउनलोड[ IXKC40N60C Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXKC40N60CCoolMOS Power MOSFETIXYS Corporation
IXYS Corporation


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