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IXKC20N60C डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - CoolMOS Power MOSFET - IXYS Corporation

भाग संख्या IXKC20N60C
समारोह CoolMOS Power MOSFET
मैन्युफैक्चरर्स IXYS Corporation 
लोगो IXYS Corporation लोगो 
पूर्व दर्शन
1 Page
		
<?=IXKC20N60C?> डेटा पत्रक पीडीएफ

IXKC20N60C pdf
IXKC 20N60C
Symbol
Qg(on)
Qgs
Qgd
td(on)
tr
td(off)
tf
RthJC
RthCH
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-220LV Outline
VGS = 10 V, VDS = 350 V, ID = 20 A
79 nC
21 nC
46 nC
VGS = 10 V, VDS = 380V
ID = 20 A, RG = 3.3
20 ns
55 ns
60 ns
10 ns
1 K/W
0.30 K/W
Reverse Conduction
Symbol
Test Conditions
VSD INF o=te103 A, VGS = 0 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
0.8 1.2 V
Note: 1. MOSFET chip capability
2. Intrinsic diode capability
3. Pulse test, t 300 µs, duty cycle d 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more 4,835,592 4,881,106 5,017,508 5,049,961
of the following U.S. patents:
4,850,072 4,931,844 5,034,796 5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1 6,259,123B1
6,404,065B1 6,162,665
6,306,728B1
6,534,343

विन्यास 2 पेज
डाउनलोड[ IXKC20N60C Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXKC20N60CCoolMOS Power MOSFETIXYS Corporation
IXYS Corporation


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