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IRGPC40KD2 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

भाग संख्या IRGPC40KD2
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRGPC40KD2?> डेटा पत्रक पीडीएफ

IRGPC40KD2 pdf
IRGPC40KD2
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltageƒ 600 ---- ---- V VGE = 0V, IC = 250µA
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage---- 0.46 ---- V/°C VGE = 0V, IC = 1.0mA
VCE(on)
Collector-to-Emitter Saturation Voltage ---- 2.1 3.2
IC = 25A
VGE = 15V
---- 2.8 ---- V IC = 42A
See Fig. 2, 5
---- 2.5 ----
IC = 25A, TJ = 150°C
VGE(th)
Gate Threshold Voltage
3.0 ---- 5.5
VCE = VGE, IC = 250µA
VGE(th)/TJ Temperature Coeff. of Threshold Voltage ---- -13 ---- mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance „ 7.0 14 ---- S VCE = 100V, IC = 25A
ICES Zero Gate Voltage Collector Current ---- ---- 250 µA VGE = 0V, VCE = 600V
---- ---- 3500
VGE = 0V, VCE = 600V, TJ = 150°C
VFM
Diode Forward Voltage Drop
---- 1.3 1.7 V IC = 15A
See Fig. 13
---- 1.2 1.6
IC = 15A, TJ = 150°C
IGES Gate-to-Emitter Leakage Current ---- ---- ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg Total Gate Charge (turn-on)
Qge Gate - Emitter Charge (turn-on)
---- 61 92
---- 13 19
IC = 25A
nC VCC = 400V
Qgc
Gate - Collector Charge (turn-on)
---- 22 33
See Fig. 8
td(on)
Turn-On Delay Time
---- 72 ----
TJ = 25°C
tr
td(off)
tf
Rise Time
Turn-Off Delay Time
Fall Time
---- 90 ----
---- 170 250
---- 140 220
ns IC = 25A, VCC = 480V
VGE = 15V, RG = 10
Energy losses include "tail" and
Eon Turn-On Switching Loss
---- 1.5 ----
diode reverse recovery.
Eoff Turn-Off Switching Loss
---- 1.5 ---- mJ See Fig. 9, 10, 11, 18
Ets Total Switching Loss
---- 3.0 4.2
tsc Short Circuit Withstand Time
10 ---- ----
µs VCC = 360V, TJ = 125°C
VGE = 15V, RG = 10, VCPK < 500V
td(on)
Turn-On Delay Time
---- 70 ----
TJ = 150°C, See Fig. 9, 10, 11, 18
tr
td(off)
Rise Time
Turn-Off Delay Time
---- 86 ----
---- 280 ----
ns IC = 25A, VCC = 480V
VGE = 15V, RG = 10
tf Fall Time
Ets Total Switching Loss
---- 270 ----
Energy losses include "tail" and
---- 4.2 ---- mJ diode reverse recovery.
LE Internal Emitter Inductance
---- 13 ---- nH Measured 5mm from package
Cies Input Capacitance
---- 1500 ----
VGE = 0V
Coes
Output Capacitance
---- 190 ---- pF VCC = 30V
See Fig. 7
Cres Reverse Transfer Capacitance
trr Diode Reverse Recovery Time
---- 17 ----
---- 42 60
ƒ = 1.0MHz
ns TJ = 25°C See Fig.
---- 74 120
TJ = 125°C
14
IF = 15A
Irr Diode Peak Reverse Recovery Current ---- 4.0 6.0 A TJ = 25°C See Fig.
---- 6.5 10
TJ = 125°C
15
VR = 200V
Qrr
Diode Reverse Recovery Charge
---- 80 180 nC TJ = 25°C See Fig.
---- 220 600
TJ = 125°C
16 di/dt = 200A/
µs
di(rec)M/dtDiode Peak Rate of Fall of Recovery ----
188
---- A/µs
TJ = 25°C See Fig.
During tb ----
160
N--o--tes:
TJ = 1‚25°VCCC=801%7 (VCES), VGE=20V, L=10µH, „ Pulse width 5.0µs,
 Repetitive rating; VGE=20V, pulse width limited
RG= 10, ( See fig. 19 )
single shot.
by max. junction temperature. ( See fig. 20 )
ƒ Pulse width 80µs; duty factor 0.1%.

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