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IRG4ZH71KD डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Surface Mountable Short Circuit Rated UltraFast IGBT - International Rectifier

भाग संख्या IRG4ZH71KD
समारोह Surface Mountable Short Circuit Rated UltraFast IGBT
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRG4ZH71KD pdf
IRG4ZH71KD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
V(BR)CES/TJ
VCE(on)
VGE(th)
VGE(th)/TJ
gfe
ICES
VFM
IGES
Collector-to-Emitter Breakdown Voltageƒ
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance„
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
1200
3.0
23
0.26
2.89
3.73
2.55
-11
34
2.45
2.40
—V
— V/°C
3.9
—V
6.0
— mV/°C
—S
500 µA
10 mA
3.7 V
±100 nA
VGE = 0V, IC = 250µA
VGE = 0V, IC = 4.0mA
IC = 42A
VGE = 15V
IC = 78A
See Fig. 2, 5
IC = 42A, TJ = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 1.5mA
VCE = 50V, IC = 42A
VGE = 0V, VCE = 1200V
VGE = 0V, VCE = 1200V, TJ = 150°C
IC = 42A
See Fig. 13
IC = 42A, TJ = 150°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tsc
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
2
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
Min.
10
Typ. Max.
380 570
48 72
120 180
80 —
45 —
215 320
220 330
3.64 —
3.17 —
6.81 9.8
——
91 —
48 —
430 —
400 —
14.6 —
2.0 —
5620 —
400 —
94 —
107 160
160 240
10 15
16 24
680 1020
1400 2100
250 —
320 —
Units
nC
ns
mJ
µs
ns
mJ
nH
pF
ns
A
nC
A/µs
Conditions
IC = 42A
VCC = 400V
See Fig.8
VGE = 15V
TJ = 25°C
IC = 42A, VCC = 800V
VGE = 15V, RG = 5.0
Energy losses include "tail"
and diode reverse recovery
See Fig. 9,10,18
VCC = 720V, TJ = 125°C
VGE = 15V, RG = 5.0
TJ = 150°C, See Fig. 10,11,18
IC = 42A, VCC = 800V
VGE = 15V, RG = 5.0,
Energy losses include "tail"
and diode reverse recovery
Measured 5mm from package
VGE = 0V
VCC = 30V
See Fig. 7
ƒ = 1.0MHz
TJ = 25°C See Fig.
TJ = 125°C 14
IF = 42A
TJ = 25°C See Fig.
TJ = 125°C 15
VR = 200V
TJ = 25°C See Fig.
TJ = 125°C
16 di/dt = 200A/µs
TJ = 25°C See Fig.
TJ = 125°C 17
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