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IRG4ZH70UD डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

भाग संख्या IRG4ZH70UD
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRG4ZH70UD pdf
IRG4ZH70UD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage Ž 1200 — — V VGE = 0V, IC = 250µA
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage — 1.20 — V/°C VGE = 0V, IC = 1.0mA
VCE(on)
Collector-to-Emitter Saturation Voltage — 2.23 3.5
IC = 42A
VGE = 15V
— 2.58 — V IC = 78A
see figures 2, 5
— 2.15 —
IC = 42A, TJ = 150°C
VGE(th)
Gate Threshold Voltage
3.0 — 6.0
VCE = VGE, IC = 250µA
VGE(th)/TJ Temperature Coeff. of Threshold Voltage
gfe Forward Transconductance 
— -13 — mV/°C VCE = VGE, IC = 250µA
30 46 — S VCE = 100V, IC = 42A
ICES
Zero Gate Voltage Collector Current
— — 250 µA VGE = 0V, VCE = 1200V
— — 10 mA VGE = 0V, VCE = 1200V, TJ = 150°C
VFM Diode Forward Voltage Drop
— 2.45 3.7 V IC = 42A
see figure 13
— 2.40 —
IC = 42A, TJ = 150°C
IGES Gate-to-Emitter Leakage Current
— — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
Min. Typ. Max.
— 390 590
— 47 71
— 120 180
— 100 —
— 28 —
— 271 400
— 189 280
— 3.0 —
— 3.67 —
— 6.67 9.8
— 37 —
— 124 —
— 200 —
— 435 —
— 12.36 —
— 2.0 —
— 7090 —
— 420 —
— 56 —
— 107 160
— 160 240
— 10 15
— 16 24
— 680 1020
— 1400 2100
— 250 —
— 320 —
Units
nC
ns
mJ
ns
mJ
nH
pF
ns
A
nC
A/µs
Conditions
IC = 42A
VCC = 400V
see figure 8
VGE = 15V
TJ = 25°C
IC = 42A, VCC = 800V
VGE = 15V, RG = 5.0
Energy losses include "tail" and
diode reverse recovery.
see figures 9, 10, 18
TJ = 150°C, see figures 11, 18
IC = 42A, VCC = 800V
VGE = 15V, RG = 5.0
Energy losses include "tail" and
diode reverse recovery.
VGE = 0V
VCC = 30V
see figure 7
ƒ = 1.0MHz
TJ = 25°C see figure
TJ = 125°C 14
IF = 42A
TJ = 25°C see figure
TJ = 125°C 15
VR = 200V
TJ = 25°C see figure
TJ = 125°C 16 di/dt = 200Aµs
TJ = 25°C see figure
TJ = 125°C 17
Notes:
ΠRepetitive rating: VGE = 20V; pulse width limited by maximum junction
temperature (figure 20)
 VCC = 80% (VCES), VGE = 20V, L =10µH, RG = 5.0(figure 19)
2
Ž Pulse width 80µs; duty factor 0.1%.
 Pulse width 5.0µs, single shot.
www.irf.com

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