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IRG4ZH50KD डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

भाग संख्या IRG4ZH50KD
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRG4ZH50KD pdf
IRG4ZH50KD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)CES Collector-to-Emitter Breakdown Voltage Ž
DV(BR)CES/DTJ Temperature Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Saturation Voltage
VGE(th)
Gate Threshold Voltage
DVGE(th)/DTJ Temperature Coeff. of Threshold Voltage
gfe Forward Transconductance 
ICES Zero Gate Voltage Collector Current
VFM Diode Forward Voltage Drop
IGES Gate-to-Emitter Leakage Current
Min.
1200
3.0
14
Typ.
0.91
2.79
3.32
2.66
-10
21
2.5
2.1
Max. Units
—V
— V/°C
3.5
—V
6.0
— mV/°C
—S
250 µA
6500
3.5 V
±100 nA
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0mA
IC = 29A
VGE = 15V
IC = 54A
see figures 2, 5
IC = 29A, TJ = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 250µA
VCE = 100V, IC = 29A
VGE = 0V, VCE = 1200V
VGE = 0V, VCE = 1200V, TJ = 150°C
IC = 16A
see figure 13
IC = 16A, TJ = 150°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tsc
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
Min. Typ. Max.
— 190 280
— 25 38
— 70 110
— 110 —
— 43 —
— 150 230
— 200 290
— 3.20 —
— 2.28 —
— 5.48 6.5
10 — —
— 73 —
— 72 —
— 290 —
— 390 —
— 10.12 —
— 2.0 —
— 2800 —
— 140 —
— 53 —
— 90 135
— 164 245
— 5.8 10
— 8.3 15
— 260 675
— 680 1838
— 120 —
— 76 —
Units
nC
ns
mJ
µs
ns
mJ
nH
pF
ns
A
nC
A/µs
Conditions
IC = 29A
VCC = 400V
see figure 8
VGE = 15V
TJ = 25°C
IC = 29A, VCC = 800V
VGE = 15V, RG = 5.0
Energy losses include "tail"
and diode reverse recovery
see figures 9,10,18
VCC = 720V, TJ = 125°C
VGE = 15V, RG = 5.0
TJ = 150°C, see figures 10,11,18
IC = 29A, VCC = 800V
VGE = 15V, RG = 5.0,
Energy losses include "tail"
and diode reverse recovery
Measured 5mm from package
VGE = 0V
VCC = 30V
see figure 7
ƒ = 1.0MHz
TJ = 25°C see figure
TJ = 125°C 14
IF = 16A
TJ = 25°C see figure
TJ = 125°C 15
VR = 200V
TJ = 25°C see figure
TJ = 125°C 16 di/dt = 200A/µs
TJ = 25°C see figure
TJ = 125°C 17
2 www.irf.com

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