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IRG4ZC70UD डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

भाग संख्या IRG4ZC70UD
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRG4ZC70UD pdf
IRG4ZC70UD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
V(BR)CES/TJ
VCE(on)
VGE(th)
VGE(th)/TJ
gfe
ICES
VFM
IGES
Parameter
Collector-to-Emitter Breakdown Voltage Ž
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance 
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Min.
600
3.0
34
Typ. Max. Units
—— V
0.36 — V/°C
1.49 1.9
1.80 — V
1.47 —
— 6.0
-7.6 — mV/°C
52 — S
— 250 µA
— 1.3 mA
1.24 1.5 V
1.16 1.3
— ±100 nA
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0mA
IC = 50A
VGE = 15V
IC = 100A
see figure 2, 5
IC = 50A, TJ = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 250µA
VCE = 100V, IC = 50A
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 150°C
IC = 50A
see figure 13
IC = 50A, TJ = 150°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
Parameter
Min. Typ. Max. Units
Conditions
Total Gate Charge (turn-on)
— 430 640
IC = 50A
Gate - Emitter Charge (turn-on)
— 48 72 nC VCC = 400V
see figure 8
Gate - Collector Charge (turn-on)
— 130 190
VGE = 15V
Turn-On Delay Time
— 71 —
TJ = 25°C
Rise Time
Turn-Off Delay Time
— 41 —
— 250 370
ns IC = 50A, VCC = 480V
VGE = 15V, RG = 5.0
Fall Time
— 110 220
Energy losses include "tail" and
Turn-On Switching Loss
— 1.59 —
diode reverse recovery.
Turn-Off Switching Loss
— 1.78 — mJ see figures 9, 10, 18
Total Switching Loss
— 3.37 4.7
Turn-On Delay Time
— 68 —
TJ = 150°C, see figures 11, 18
Rise Time
Turn-Off Delay Time
— 43 —
— 370 —
ns IC = 50A, VCC = 480V
VGE = 15V, RG = 5.0
Fall Time
— 130 —
Energy losses include "tail" and
Total Switching Loss
— 4.5 — mJ diode reverse recovery.
Internal Emitter Inductance
— 2.0 — nH
Input Capacitance
— 7400 —
VGE = 0V
Output Capacitance
— 730 — pF VCC = 30V
see figure 7
Reverse Transfer Capacitance
— 90 —
ƒ = 1.0MHz
Diode Reverse Recovery Time
— 90 140 ns TJ = 25°C see figure
— 120 180
TJ = 125°C 14
IF = 50A
Diode Peak Reverse Recovery Current — 7.3 11 A TJ = 25°C see figure
— 11 16
TJ = 125°C 15
VR = 200V
Diode Reverse Recovery Charge
— 360 550 nC TJ = 25°C see figure
— 780 1200
TJ = 125°C 16 di/dt = 200Aµs
Diode Peak Rate of Fall of Recovery — 370 — A/µs TJ = 25°C see figure
During tb
— 220 —
TJ = 125°C 17
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