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AOD444 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 60V N-Channel MOSFET - Alpha & Omega Semiconductors

भाग संख्या AOD444
समारोह 60V N-Channel MOSFET
मैन्युफैक्चरर्स Alpha & Omega Semiconductors 
लोगो Alpha & Omega Semiconductors लोगो 
पूर्व दर्शन
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<?=AOD444?> डेटा पत्रक पीडीएफ

AOD444 pdf
AOD444/AOI444
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=48V, VGS=0V
The AOD4 Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
ID(ON)
On state drain current
VGS=10V, VDS=5V
VGS=10V, ID=12A
RDS(ON) Static Drain-Source On-Resistance
VGS=4.5V, ID=6A
gFS Forward Transconductance
VDS=5V, ID=20A
VSD Diode Forward Voltage
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
60
1
30
1
5
100
2.4 3
47
85
67
14
0.74
60
100
85
1
12
V
µA
nA
V
A
m
m
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=30V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
360 450 540
40 61 80
16 27 40
0.6 1.4 2.0
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
7.5 10 nC
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=30V, ID=12A
3.8 5 nC
1.2 nC
Qgd Gate Drain Charge
1.9 nC
tD(on)
Turn-On DelayTime
4.2 ns
tr Turn-On Rise Time
VGS=10V, VDS=30V, RL=2.5, 3.4 ns
tD(off)
Turn-Off DelayTime
RGEN=3
16 ns
tf Turn-Off Fall Time
2 ns
trr Body Diode Reverse Recovery Time IF=12A, dI/dt=100A/µs
27 35 ns
Qrr Body Diode Reverse Recovery Charge IF=12A, dI/dt=100A/µs
30 nC
A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power
dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the
user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation P D is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0 : Aug 2009
www.aosmd.com
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