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AOD413 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-Channel Enhancement Mode Field Effect Transistor - Alpha & Omega Semiconductors

भाग संख्या AOD413
समारोह P-Channel Enhancement Mode Field Effect Transistor
मैन्युफैक्चरर्स Alpha & Omega Semiconductors 
लोगो Alpha & Omega Semiconductors लोगो 
पूर्व दर्शन
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<?=AOD413?> डेटा पत्रक पीडीएफ

AOD413 pdf
AOD413
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=-10mA, VGS=0V
IDSS Zero Gate Voltage Drain Current
VDS=-32V, VGS=0V
TJ=55°C
IGSS Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th) Gate Threshold Voltage
VDS=VGS ID=-250µA
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
RDS(ON) Static Drain-Source On-Resistance
VGS=-10V, ID=-12A
TJ=125°C
VGS=-4.5V, ID=-8A
gFS Forward Transconductance
VDS=-5V, ID=-12A
VSD Diode Forward Voltage
IS=-1A,VGS=0V
IS Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
VGS=0V, VDS=-20V, f=1MHz
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V)
Qg(4.5V) Total Gate Charge (4.5V)
Qgs Gate Source Charge
VGS=-10V, VDS=-20V, ID=-12A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=-10V, VDS=-20V, RL=1.7,
RGEN=3
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=-12A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=-12A, dI/dt=100A/µs
-40
-1
-30
-1
-5
±100
-1.9 -3
36
56
51
16
-0.75
45
70
69
-1
-12
657 850
143 185
63 90
6.5
14.1
7
2.2
4.1
8
12.2
24
12.5
23.2
18.2
V
µA
nA
V
A
m
m
S
V
A
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power
dissipation PDSM is based on R qJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's
specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
Rev 3: Jan 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.

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