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AOD403 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 30V P-Channel MOSFET - Alpha & Omega Semiconductors

भाग संख्या AOD403
समारोह 30V P-Channel MOSFET
मैन्युफैक्चरर्स Alpha & Omega Semiconductors 
लोगो Alpha & Omega Semiconductors लोगो 
पूर्व दर्शन
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<?=AOD403?> डेटा पत्रक पीडीएफ

AOD403 pdf
AOD403/AOI403
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
RDS(ON) Static Drain-Source On-Resistance
Conditions
Min Typ Max Units
ID=-250µA, VGS=0V
-30
V
VDS=-30V, VGS=0V
TJ=55°C
-1
µA
-5
VDS=0V, VGS= ±25V
±100 nA
VDS=VGS ID=-250µA
-1.5 -2.5 -3.5 V
VGS=-10V, VDS=-5V
-200
A
VGS=-20V, ID=-20A
TO252
TJ=125°C
5.1 6.2
m
7.6 9.2
VGS=-10V, ID=-20A
TO252
6.2 8 m
VGS=-20V, ID=-20A
TO251A
5.6 6.7 m
VGS=-10V, ID=-20A
TO251A
6.7 8.5 m
gFS Forward Transconductance
VDS=-5V, ID=-20A
VSD Diode Forward Voltage
IS=-1A,VGS=0V
IS Maximum Body-Diode Continuous CurrentG
42
-0.7 -1
-70
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
VGS=0V, VDS=-15V, f=1MHz
2310 2890 3500
410 585 760
pF
pF
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=0V, f=1MHz
280 470 660
1.9 3.8 5.7
pF
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=-10V, VDS=-15V, ID=-20A
40 51 61 nC
10 12 14 nC
Qgd Gate Drain Charge
10 16 22 nC
tD(on)
tr
tD(off)
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=-10V, VDS=-15V, RL=0.75,
RGEN=3
16
12
45
ns
ns
ns
tf Turn-Off Fall Time
22 ns
trr Body Diode Reverse Recovery Time IF=-20A, dI/dt=100A/µs
14 18 22 ns
Qrr Body Diode Reverse Recovery Charge IF=-20A, dI/dt=100A/µs
9 11 13 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.9.0: July 2013
www.aosmd.com
Page 2 of 6

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