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AOD402 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode Field Effect Transistor - Alpha & Omega Semiconductors

भाग संख्या AOD402
समारोह N-Channel Enhancement Mode Field Effect Transistor
मैन्युफैक्चरर्स Alpha & Omega Semiconductors 
लोगो Alpha & Omega Semiconductors लोगो 
पूर्व दर्शन
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<?=AOD402?> डेटा पत्रक पीडीएफ

AOD402 pdf
AOD402
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=24V, VGS=0V
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±25V
VDS=VGS, ID=250µA
VGS=10V, VDS=5V
VGS=20V, ID=18A
RDS(ON)
gFS
VSD
IS
Static Drain-Source On-Resistance
VGS=10V, ID=18A
VGS=4.5V, ID=6A
Forward Transconductance
VDS=5V, ID=18A
Diode Forward Voltage
IS=18A, VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
30
1
40
1
5
100
2.4 3
12 15
17.4 21
15 18
36 44
24
0.8 1
18
V
µA
nA
V
A
m
m
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
769 pF
185 pF
131 pF
0.7
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=10V, ID=18A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, ID=18A,
RL=0.82, RGEN=3
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=18A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=18A, dI/dt=100A/µs
15.9 nC
2.44 nC
4.92 nC
6.2 ns
10.9 ns
16 ns
4.8 ns
18 ns
8.1 nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depend
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires. Rev3: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.

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