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IXFX25N90 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - (IXFx2xN90) HiPerFET Power MOSFETs - IXYS Corporation

भाग संख्या IXFX25N90
समारोह (IXFx2xN90) HiPerFET Power MOSFETs
मैन्युफैक्चरर्स IXYS Corporation 
लोगो IXYS Corporation लोगो 
पूर्व दर्शन
1 Page
		
<?=IXFX25N90?> डेटा पत्रक पीडीएफ

IXFX25N90 pdf
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IXFK 25N90 IXFX 25N90
IXFK 26N90 IXFX 26N90
Symbol
g
fs
Ciss
Coss
C
rss
td(on)
tr
td(off)
t
f
Qg(on)
Qgs
Qgd
RthJC
R
thCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V = 10 V; I = 0.5 • I
Note 1
DS D D25
VGS = 0 V, VDS = 25 V, f = 1 MHz
18 28
S
8.7 10.8 nF
800 1000 pF
300 375 pF
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1 W (External),
60
35
130
24
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
240
56
107
nC
nC
nC
0.22 K/W
0.15 K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS VGS = 0 V
26N90
25N90
I Repetitive;
26N90
SM
pulse width limited by TJM
25N90
VSD IF = IS, VGS = 0 V, Note 1
trr
IF = IS, -di/dt = 100 A/ms, VR = 100 V
QRM
I
RM
Note: 1. Pulse test, t £ 300 ms, duty cycle d £ 2 %
26 A
25
104 A
100
1.5 V
250 ns
1.4 mC
10 A
PLUS247TM (IXFX) Outline
Dim. Millimeter
Min. Max.
A 4.83 5.21
A1 2.29 2.54
A2 1.91 2.16
b 1.14 1.40
b 1.91 2.13
1
b 2.92 3.12
2
C 0.61 0.80
D 20.80 21.34
E 15.75 16.13
e 5.45 BSC
L 19.81 20.32
L1 3.81 4.32
Q 5.59 6.20
R 4.32 4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 .244
.170 .190
TO-264 AA (IXFK) Outline
Dim. Millimeter
Min. Max.
A 4.82 5.13
A1 2.54 2.89
A2 2.00 2.10
b 1.12 1.42
b1 2.39 2.69
b2 2.90 3.09
c 0.53 0.83
D 25.91 26.16
E 19.81 19.96
e 5.46 BSC
J 0.00 0.25
K 0.00 0.25
L 20.32 20.83
L1 2.29 2.59
P 3.17 3.66
Q 6.07 6.27
Q1 8.38 8.69
R 3.81 4.32
R1 1.78 2.29
S 6.04 6.30
T 1.57 1.83
Inches
Min. Max.
.190
.100
.079
.044
.094
.114
.021
.202
.114
.083
.056
.106
.122
.033
1.020 1.030
.780 .786
.215 BSC
.000 .010
.000
.800
.090
.125
.010
.820
.102
.144
.239
.330
.150
.070
.238
.247
.342
.170
.090
.248
.062 .072
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-4
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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXFX25N90(IXFx2xN90) HiPerFET Power MOSFETsIXYS Corporation
IXYS Corporation


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