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IXFT80N15Q डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - (IXFx80N15Q) HiPerFET Power MOSFETs Q-Class - IXYS Corporation

भाग संख्या IXFT80N15Q
समारोह (IXFx80N15Q) HiPerFET Power MOSFETs Q-Class
मैन्युफैक्चरर्स IXYS Corporation 
लोगो IXYS Corporation लोगो 
पूर्व दर्शन
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<?=IXFT80N15Q?> डेटा पत्रक पीडीएफ

IXFT80N15Q pdf
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Symbol
Test Conditions
IXFH 80N15Q IXFK 80N15Q
IXFT 80N15Q
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD (IXFH) Outline
g
fs
Ciss
C
oss
Crss
td(on)
t
r
td(off)
tf
Qg(on)
Q
gs
Qgd
R
thJC
R
thCK
V = 10 V; I = 0.5 • I , pulse test
DS D D25
V = 0 V, V = 25 V, f = 1 MHz
GS DS
35 50
4500
1400
680
S
pF
pF
pF
V = 10 V, V = 0.5 • V , I = 0.5 • I
GS
DS
DSS D
D25
RG = 2.0 W (External),
30
55
68
20
ns
ns
ns
ns
V = 10 V, V = 0.5 • V , I = 0.5 • I
GS
DS
DSS D
D25
180
39
85
nC
nC
nC
0.35 K/W
TO-247
TO-264
0.25
0.15
K/W
K/W
Source-Drain Diode
Symbol Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS VGS = 0 V
80 A
ISM Repetitive; pulse width limited by TJM
320 A
123
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
Dim.
A
A1
A2
b
b1
b2
C
D
E
e
L
L1
ÆP
Q
R
S
Millimeter
Min. Max.
4.7 5.3
2.2 2.54
2.2 2.6
1.0 1.4
1.65 2.13
2.87 3.12
.4
20.80
15.75
.8
21.46
16.26
5.20
19.81
5.72
20.32
4.50
3.55 3.65
5.89 6.40
4.32 5.49
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205
.780
0.225
.800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-264 AA Outline
VSD IF = IS, VGS = 0 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
trr
QRM
IRM
IF = IS -di/dt = 100 A/ms, VR = 100 V
1.5 V
200 ns
1.2 mC
10 A
TO-268 Outline
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Millimeter
Min. Max.
4.82 5.13
2.54 2.89
2.00 2.10
1.12 1.42
2.39 2.69
2.90 3.09
0.53 0.83
25.91 26.16
19.81 19.96
5.46 BSC
0.00 0.25
0.00 0.25
20.32 20.83
2.29 2.59
3.17 3.66
6.07 6.27
8.38 8.69
3.81 4.32
1.78 2.29
6.04 6.30
1.57 1.83
Inches
Min. Max.
.190 .202
.100 .114
.079 .083
.044 .056
.094 .106
.114 .122
.021 .033
1.020 1.030
.780 .786
.215 BSC
.000 .010
.000 .010
.800 .820
.090 .102
.125 .144
.239 .247
.330 .342
.150 .170
.070 .090
.238 .248
.062 .072
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
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भाग संख्याविवरणविनिर्माण
IXFT80N15Q(IXFx80N15Q) HiPerFET Power MOSFETs Q-ClassIXYS Corporation
IXYS Corporation


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