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IXGT20N60BD1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - (IXGH20N60BD1 / IXGT20N60BD1) HiPerFAST IGBT with Diode - IXYS Corporation

भाग संख्या IXGT20N60BD1
समारोह (IXGH20N60BD1 / IXGT20N60BD1) HiPerFAST IGBT with Diode
मैन्युफैक्चरर्स IXYS Corporation 
लोगो IXYS Corporation लोगो 
पूर्व दर्शन
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<?=IXGT20N60BD1?> डेटा पत्रक पीडीएफ

IXGT20N60BD1 pdf
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IXGH 20N60BD1
IXGT 20N60BD1
Symbol
gfs
et4U.com
Cies
C
oes
Cres
Qg
Q
ge
Qgc
t
d(on)
tri
t
d(off)
tfi
E
off
td(on)
t
ri
Eon
t
d(off)
tfi
Eoff
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC90; VCE = 10 V,
Pulse test, t £ 300 ms, duty cycle £ 2 %
9 17
S
V = 25 V, V = 0 V, f = 1 MHz
CE GE
1500
150
40
pF
pF
pF
I = I , V = 15 V, V = 0.5 V
C C90 GE
CE CES
55 nC
12 nC
20 nC
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V, L = 100 mH,
VCE = 0.8 VCES, RG = Roff = 10 W
Remarks: Switching times may increase
for V (Clamp) > 0.8 • V , higher T or
CE
CES
J
increased RG
15
25
110
100
0.7
Inductive load, TJ = 125°C
I
C
=
I,
C90
V
GE
=
15
V,
L
=
100
mH
VCE = 0.8 VCES, RG = Roff = 10 W
Remarks: Switching times may increase
15
35
0.75
220
for V (Clamp) > 0.8 • V , higher T or
140
CE
CES
J
increased RG
DataSheet4U.c1o.m2
TO-247
0.25
ns
ns
200 ns
150 ns
1.0 mJ
ns
ns
mJ
ns
ns
mJ
0.83 K/W
K/W
TO-247 AD (IXGH) Outline
Dim. Millimeter
Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H
- 4.5 -
0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
TO-268AA (D3 PAK)
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
VF
IRM
t
rr
RthJC
IF = 30A, VGE = 0 V,
TJ = 150°C
Pulse test, t £ 300 ms, duty cycle d £ 2 % TJ = 25°C
IF = 30A, VGE = 0 V, -diF/dt = 100 A/ms
V = 100 V
R
IF = 1 A; -di/dt = 100 A/ms; VR = 30 V
T
J
=100°C
TJ = 25°C
6
100
25
1.6 V
2.5 V
A
ns
ns
1.0 K/W
Min. Recommended Footprint
Dim. Millimeter
Min. Max.
A 4.9 5.1
A1 2.7 2.9
A2 .02 .25
b 1.15 1.45
b2 1.9 2.1
C .4 .65
D 13.80 14.00
E 15.85 16.05
E1 13.3 13.6
e 5.45 BSC
H 18.70 19.10
L 2.40 2.70
L1 1.20 1.40
L2 1.00 1.15
L3 0.25 BSC
L4 3.80 4.10
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75 .83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
.039 .045
.010 BSC
.150 .161
DataSheet4U©.c2o0m00 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-2

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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXGT20N60BD1(IXGH20N60BD1 / IXGT20N60BD1) HiPerFAST IGBT with DiodeIXYS Corporation
IXYS Corporation


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