DataSheet.in

AOT400 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode Field Effect Transistor - Alpha & Omega Semiconductors

भाग संख्या AOT400
समारोह N-Channel Enhancement Mode Field Effect Transistor
मैन्युफैक्चरर्स Alpha & Omega Semiconductors 
लोगो Alpha & Omega Semiconductors लोगो 
पूर्व दर्शन
1 Page
		
<?=AOT400?> डेटा पत्रक पीडीएफ

AOT400 pdf
www.DataSheet4U.com
AOT400
Electrical Characteristics (TJ=25°C unless otherwise noted)
et4U.com
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=10mA, VGS=0V
75
V
IDSS Zero Gate Voltage Drain Current
VDS=75V, VGS=0V
TJ=55°C
1
µA
5
IGSS Gate-Body leakage current
VDS=0V, VGS=±20V
100 nA
VGS(th) Gate Threshold Voltage
VDS=VGS, ID=250µA
2 2.8 4
V
ID(ON)
On state drain current
VGS=10V, VDS=5V
200
A
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=30A
TJ=125°C
4.2 4.7
m
7.2 8.2
VGS=6V, ID=30A
4.6 5.2 m
gFS
Forward Transconductance
VDS=5V, ID=30A
VDS=15V, ID=70A
106
S
200
VSD Diode Forward Voltage
IS=1A, VGS=0V
0.7 1
V
IS Maximum Body-Diode Continuous Current
110 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
8390
1060
450
1.2
10500
1.5
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
DataSheet4U.com
Qgs Gate Source Charge
VGS=10V, VDS=30V, ID=30A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
VGS=10V, VDS=30V, RL=1,
tD(off)
Turn-Off DelayTime
RGEN=3
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=30A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=30A, dI/dt=100A/µs
167 210
40
45
29
41
90
34
64 80
180
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
Rev3: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
DataSheet4U.com
Alpha & Omega Semiconductor, Ltd.
DataSheet4 U .com
DataShee

विन्यास 5 पेज
डाउनलोड[ AOT400 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
AOT400N-Channel Enhancement Mode Field Effect TransistorAlpha & Omega Semiconductors
Alpha & Omega Semiconductors
AOT402N-Channel Enhancement Mode Field Effect TransistorAlpha & Omega Semiconductors
Alpha & Omega Semiconductors


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English