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IRGPS40B120UDP डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Insulated Gate Bipolar Transistor - International Rectifier

भाग संख्या IRGPS40B120UDP
समारोह Insulated Gate Bipolar Transistor
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Ref.Fig.
V(BR)CES
V(BR)CES/TJ
VCE(on)
VGE(th)
VGE(th)/TJ
gfe
ICES
VFM
IGES
Collector-to-Emitter Breakdown Voltage 1200
Temperature Coeff. of Breakdown Voltage –––
Collector-to-Emitter Saturation Voltage –––
–––
–––
–––
Gate Threshold Voltage
4.0
Temperature Coeff. of Threshold Voltage –––
Forward Transconductance
–––
Zero Gate Voltage Collector Current –––
–––
Diode Forward Voltage Drop
–––
–––
–––
–––
Gate-to-Emitter Leakage Current
–––
–––
0.40
3.12
3.39
3.88
4.24
5.0
-12
30.5
–––
420
2.03
2.17
2.26
2.46
–––
––– V
––– V/°C
3.40
3.70 V
4.30
4.70
6.0
––– mV/°C
––– S
500 µA
1200
2.40
2.60 V
2.68
2.95
±100 nA
VGE = 0V, IC = 500µA
VGE = 0V, IC = 1.0mA, (25°C-125°C)
IC = 40A
VGE = 15V
IC = 50A
IC = 40A, TJ = 125°C
IC = 50A, TJ = 125°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 1.0mA, (25°C-125°C)
VCE = 50V, IC = 40A, PW=80µs
VGE = 0V, VCE = 1200V
VGE = 0V, VCE = 1200V, TJ = 125°C
IC = 40A
IC = 50A
IC = 40A, TJ = 125°C
IC = 50A, TJ = 125°C
VGE = ±20V
5, 6
7, 9
10
11
9,10
11 ,12
8
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
Eon
Eoff
Etot
Eon
Eoff
Etot
td(on)
tr
td(off)
tf
Cies
Coes
Cres
RBSOA
SCSOA
Erec
trr
Irr
2
Parameter
Total Gate Charge (turn-on)
DataSMhine.etT4yUp..coMmax. Units
Conditions
––– 340 510
IC = 40A
Ref.Fig.
23
Gate - Emitter Charge (turn-on)
––– 40 60 nC VCC = 600V
CT1
Gate - Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
––– 165 248
VGE = 15V
––– 1400 1750 µJ IC = 40A, VCC = 600V
––– 1650 2050
VGE = 15V,RG = 4.7Ω, L =200µH
CT4
WF1
Total Switching Loss
Turn-On Switching Loss
––– 3050 3800
––– 1950 2300
Ls = 150nH
TJ = 25°C
TJ = 125°C
WF2
13,15
Turn-Off Switching Loss
––– 2200 2950 µJ Energy losses include "tail" and
Total Switching Loss
––– 4150 5250
diode reverse recovery.
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
––– 76 99
––– 39 55
––– 332 365
––– 25 33
IC = 40A, VCC = 600V
VGE = 15V, RG = 4.7L =200µH
ns Ls = 150nH, TJ = 125°C
14, 16
CT4
WF1
WF2
Input Capacitance
Output Capacitance
––– 4300 –––
––– 330 –––
VGE = 0V
pF VCC = 30V
22
Reverse Transfer Capacitance
––– 160 –––
f = 1.0MHz
Reverse Bias Safe Operting Area
FULL SQUARE
TJ = 150°C, IC = 160A, Vp =1200V
VCC = 1000V, VGE = +15V to 0V
RG = 4.7
4
CT2
Short Circuit Safe Operting Area
10 ––– –––
TJ = 150°C, Vp =1200V
µs VCC = 900V, VGE = +15V to 0V,
RG = 4.7
CT3
WF4
Reverse Recovery energy of the diode
Diode Reverse Recovery time
Diode Peak Reverse Recovery Current
––– 3346 –––
––– 180 –––
––– 50 –––
µJ TJ = 125°C
ns VCC = 600V, IF = 60A, L =200µH
A VGE = 15V,RG = 4.7Ω, Ls = 150nH
17,18,19
20, 21
CT4,WF3
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