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IRG4PH30KD डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

भाग संख्या IRG4PH30KD
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRG4PH30KD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
V(BR)CES/TJ
VCE(on)
VGE(th)
VGE(th)/TJ
gfe
ICES
VFM
IGES
Collector-to-Emitter Breakdown VoltageS
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance T
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
1200
3.0
4.3
0.19
3.10
3.90
3.01
-12
6.5
3.4
3.3
V
V/°C
4.2
V
6.0
mV/°C
S
250 µA
3500
3.8 V
3.7
±100 nA
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0mA
IC = 10A
VGE = 15V
IC = 20A
See Fig. 2, 5
IC = 10A, TJ = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 250µA
VCE = 100V, IC = 10A
VGE = 0V, VCE = 1200V
VGE = 0V, VCE = 1200V, TJ = 150°C
IC = 10A
See Fig. 13
IC = 10A, TJ = 150°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tsc
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
Parameter
Min. Typ. Max.
Total Gate Charge (turn-on)
53 80
Gate - Emitter Charge (turn-on)
9.0 14
Gate - Collector Charge (turn-on)
21 32
Turn-On Delay Time
Rise Time
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84
Turn-Off Delay Time
220 340
Fall Time
90 140
Turn-On Switching Loss
0.95
Turn-Off Switching Loss
1.15
Total Switching Loss
2.10 2.6
Short Circuit Withstand Time
10 — —
Turn-On Delay Time
42
Rise Time
79
Turn-Off Delay Time
540
Fall Time
97
Total Switching Loss
3.5
Internal Emitter Inductance
13
Input Capacitance
800
Output Capacitance
60
Reverse Transfer Capacitance
14
Diode Reverse Recovery Time
50 76
72 110
Diode Peak Reverse Recovery Current 4.4 7.0
5.9 8.8
Diode Reverse Recovery Charge
130 200
250 380
Diode Peak Rate of Fall of Recovery
210
During tb
180
Units
nC
ns
mJ
µs
ns
mJ
nH
pF
ns
A
nC
A/µs
Conditions
IC = 10A
VCC = 400V
See Fig.8
VGE = 15V
TJ = 25°C
IC = 10A, VCC = 800V
VGE = 15V, RG = 23
Energy losses include "tail"
and diode reverse recovery
See Fig. 9,10,18
VCC = 720V, TJ = 125°C
VGE = 15V, RG = 5.0
TJ = 150°C, See Fig. 10,11,18
IC = 10A, VCC = 800V
VGE = 15V, RG = 23Ω,
Energy losses include "tail"
and diode reverse recovery
Measured 5mm from package
VGE = 0V
VCC = 30V
See Fig. 7
ƒ = 1.0MHz
TJ = 25°C See Fig.
TJ = 125°C 14
IF = 10A
TJ = 25°C See Fig.
TJ = 125°C 15
VR = 200V
TJ = 25°C See Fig.
TJ = 125°C
16 di/dt = 200A/µs
TJ = 25°C See Fig.
TJ = 125°C 17
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