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IRG4PH30K डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

भाग संख्या IRG4PH30K
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
V(BR)ECS
V(BR)CES/TJ
Collector-to-Emitter Breakdown Voltage 1200
Emitter-to-Collector Breakdown Voltage T 18
Temperature Coeff. of Breakdown Voltage
0.19
3.10
4.2
V
V
V/°C
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
VGE = 0V, IC = 2.0mA
IC = 10A
VGE = 15V
VCE(ON)
Collector-to-Emitter Saturation Voltage
VGE(th)
Gate Threshold Voltage
VGE(th)/TJ Temperature Coeff. of Threshold Voltage
gfe Forward Transconductance U
ICES Zero Gate Voltage Collector Current
IGES Gate-to-Emitter Leakage Current
3.90 V IC = 20A
See Fig.2, 5
3.01
IC = 10A , TJ = 150°C
3.0 6.0
VCE = VGE, IC = 250µA
-12 mV/°C VCE = VGE, IC = 250µA
4.3 6.5 S VCE = 100 V, IC = 10A
— — 250 µA VGE = 0V, VCE = 1200V
— — 2.0
VGE = 0V, VCE = 10V, TJ = 25°C
— — 2000
VGE = 0V, VCE = 1200V, TJ = 150°C
— — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tsc
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Parameter
Min. Typ. Max.
Total Gate Charge (turn-on)
53 80
Gate - Emitter Charge (turn-on)
9.0 14
Gate - Collector Charge (turn-on)
21 32
Turn-On Delay Time
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Rise Time
23
Turn-Off Delay Time
200 300
Fall Time
110 170
Turn-On Switching Loss
0.64
Turn-Off Switching Loss
0.92
Total Switching Loss
1.56 2.4
Short Circuit Withstand Time
10 — —
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
27
26
310
330
3.18
13
800
60
14
Units
nC
ns
mJ
µs
ns
mJ
nH
pF
Conditions
IC = 10A
VCC = 400V
See Fig.8
VGE = 15V
TJ = 25°C
IC =10A, VCC = 960V
VGE = 15V, RG = 23
Energy losses include "tail"
See Fig. 9,10,14
VCC = 720V, TJ = 125°C
VGE = 15V, RG = 23
TJ = 150°C,
IC = 10A, VCC = 960V
VGE = 15V, RG = 23
Energy losses include "tail"
See Fig. 10,11,14
Measured 5mm from package
VGE = 0V
VCC = 30V
See Fig. 7
ƒ = 1.0MHz
Notes:
Q Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG =23,
(See fig. 13a)
S Repetitive rating; pulse width limited by maximum
junction temperature.
T Pulse width 80µs; duty factor 0.1%.
U Pulse width 5.0µs, single shot.
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