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IXGX60N60B2D1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - (IXGX60N60B2D1 / IXGK60N60B2D1) HiPerFAST IGBT with Diode - IXYS Corporation

भाग संख्या IXGX60N60B2D1
समारोह (IXGX60N60B2D1 / IXGK60N60B2D1) HiPerFAST IGBT with Diode
मैन्युफैक्चरर्स IXYS Corporation 
लोगो IXYS Corporation लोगो 
पूर्व दर्शन
1 Page
		
<?=IXGX60N60B2D1?> डेटा पत्रक पीडीएफ

IXGX60N60B2D1 pdf
www.DataSheet4U.com
Symbol
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
et4U.cotfmi
Eoff
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
IC = 50 A; VCE = 10 V,
Note 1
VCE = 25 V, VGE = 0 V, f = 1 MHz
40 58
3900
340
100
S
pF
pF
pF
IC = 50 A, VGE = 15 V, VCE = 0.5 VCES
170 nC
25 nC
57 nC
Inductive load, TJ = 25°C
IC = 50 A, VGE = 15 V
VCE = 400 V, RG = Roff = 3.3
Inductive load, TJ = 125°C
IC = 50 A, VGE = 15 V
VCE = 400 V, RG = Roff = 2.0
28 ns
30 ns
160 270 ns
100 170 ns
1.0 2.5 mJ
28 ns
36 ns
1.5 mJ
310 ns
240 ns
2.8 mJ
DataSheet4U.c0o.2m5 K/W
0.15
K/W
IXGK 60N60B2D1
IXGX 60N60B2D1
TO-264 AA Outline
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Millimeter
Min. Max.
4.82 5.13
2.54 2.89
2.00 2.10
1.12 1.42
2.39 2.69
2.90 3.09
0.53 0.83
25.91 26.16
19.81 19.96
5.46 BSC
0.00 0.25
0.00 0.25
20.32 20.83
2.29 2.59
3.17 3.66
6.07 6.27
8.38 8.69
3.81 4.32
1.78 2.29
6.04 6.30
1.57 1.83
PLUS247 Outline
Inches
Min. Max.
.190 .202
.100 .114
.079 .083
.044 .056
.094 .106
.114 .122
.021 .033
1.020 1.030
.780 .786
.215 BSC
.000 .010
.000 .010
.800 .820
.090 .102
.125 .144
.239 .247
.330 .342
.150 .170
.070 .090
.238 .248
.062 .072
DataShee
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF IF = 60 A, VGE = 0 V,
Note 1
TJ = 150°C
2.1 V
1.4 V
IRM
trr
RthJC
IF = 60 A, VGE = 0 V, -diF/dt = 100 A/µ TJ = 100°C
VR = 100 V
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V
Note 1: Pulse test, t 300 µs, duty cycle 2 %
8.3 A
35 ns
0.85 K/W
DataSheet4U.com
IXYS reserves the right to change limits, test conditions, and dimensions.
Terminals:
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim. Millimeter
Min. Max.
A 4.83 5.21
A1 2.29 2.54
A2 1.91 2.16
b 1.14 1.40
b1 1.91 2.13
b2 2.92 3.12
C 0.61 0.80
D 20.80 21.34
E 15.75 16.13
e 5.45 BSC
L 19.81 20.32
L1 3.81 4.32
Q 5.59 6.20
R 4.32 4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
DataSheet4 U .com
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
DataSheet4U.com

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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXGX60N60B2D1(IXGX60N60B2D1 / IXGK60N60B2D1) HiPerFAST IGBT with DiodeIXYS Corporation
IXYS Corporation


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