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IXGX50N60AU1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - HiPerFAST IGBT with Diode - IXYS Corporation

भाग संख्या IXGX50N60AU1
समारोह HiPerFAST IGBT with Diode
मैन्युफैक्चरर्स IXYS Corporation 
लोगो IXYS Corporation लोगो 
पूर्व दर्शन
1 Page
		
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IXGX50N60AU1 pdf
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IXGX50N60AU1
IXGX50N60AU1S
Symbol
gfs
Qg
Qge
Q
gc
t
d(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
t
d(off)
tfi
et4U.coEmoff
RthJC
R
thCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 HOLE-LESS
IC = IC90; VCE = 10 V,
Pulse test, t 300 µs, duty cycle 2 %
25 35
S
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
I
C
=
I,
C90
V
GE
=
15
V,
L
=
100
µH,
VCE = 0.8 VCES, RG = Roff = 2.7
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
Inductive
load,
T
J
=
125°C
IC = IC90, VGE = 15 V, L = 100 µH
VCE = 0.8 VCES, RG = Roff = 2.7
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased R
G
200 nC
50 nC
80 nC
50 ns
210 ns
200 ns
275 400 ns
4.8 mJ
50 ns
240 ns
3 mJ
280 ns
600 ns
9.6 mJ
0.42 K/W
DataSh0e.e1t54U.com K/W
TO-247 HOLE-LESS SMD
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF
I
RM
trr
RthJC
IF = IC90, VGE = 0 V,
Pulse test, t 300 µs, duty cycle d 2 %
1.7 V
I
F
=
I,
C90
V
GE
=
0
V,
-di /dt
F
=
480
A/µs
VR = 360 V
TJ = 125°C
IF = 1 A; -di/dt = 200 A/µs; VR = 30 V TJ = 25°C
19
175
35
33 A
ns
50 ns
0.75 K/W
DataShee
DataSheet4U.com
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
DataSheet4 U .com
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481
DataSheet4U.com
5,486,715
5,381,025

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शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXGX50N60AU1HiPerFAST IGBT with DiodeIXYS Corporation
IXYS Corporation
IXGX50N60AU1SHiPerFAST IGBT with DiodeIXYS Corporation
IXYS Corporation


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