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IXFX150N15 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - HiPerFET Power MOSFETs - IXYS Corporation

भाग संख्या IXFX150N15
समारोह HiPerFET Power MOSFETs
मैन्युफैक्चरर्स IXYS Corporation 
लोगो IXYS Corporation लोगो 
पूर्व दर्शन
1 Page
		
<?=IXFX150N15?> डेटा पत्रक पीडीएफ

IXFX150N15 pdf
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IXFK 150N15
IXFX 150N15
Symbol
g
fs
Ciss
Coss
C
rss
td(on)
tr
td(off)
t
f
Qg(on)
Qgs
Qgd
RthJC
R
thCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V = 10 V; I = 60A
DS D
Note 2
VGS = 0 V, VDS = 25 V, f = 1 MHz
50 75
9100
2600
1200
S
pF
pF
pF
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1 W (External),
50
60
110
45
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
360
65
190
nC
nC
nC
0.22 K/W
0.15 K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS VGS = 0 V
ISM Repetitive;
pulse width limited by TJM
VSD IF = 100A, VGS = 0 V, Note 1
trr
QRM IF = 50A,-di/dt = 100 A/ms, VR = 50 V
IRM
150 A
600 A
1.5 V
250 ns
1.1 mC
13 A
PLUS247TM (IXFX) Outline)
Dim. Millimeter
Min. Max.
A 4.83 5.21
A 2.29 2.54
1
A 1.91 2.16
2
b 1.14 1.40
b1 1.91 2.13
b2 2.92 3.12
C 0.61 0.80
D 20.80 21.34
E 15.75 16.13
e 5.45 BSC
L 19.81 20.32
L1 3.81 4.32
Q 5.59 6.20
R 4.32 4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 .244
.170 .190
TO-264 AA Outline
Note: 1. Pulse width limited by T
JM
2. Pulse test, t £ 300 ms, duty cycle d £ 2 %
Dim. Millimeter
Min. Max.
A 4.82 5.13
A1 2.54 2.89
A2 2.00 2.10
b 1.12 1.42
b1 2.39 2.69
b2 2.90 3.09
c 0.53 0.83
D 25.91 26.16
E 19.81 19.96
e 5.46 BSC
J 0.00 0.25
K 0.00 0.25
L 20.32 20.83
L1 2.29 2.59
P 3.17 3.66
Q 6.07 6.27
Q1 8.38 8.69
R 3.81 4.32
R1 1.78 2.29
S 6.04 6.30
T 1.57 1.83
Inches
Min. Max.
.190
.100
.079
.044
.094
.114
.021
.202
.114
.083
.056
.106
.122
.033
1.020 1.030
.780 .786
.215 BSC
.000 .010
.000
.800
.090
.125
.010
.820
.102
.144
.239
.330
.150
.070
.238
.247
.342
.170
.090
.248
.062 .072
© 2000 IXYS All rights reserved
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IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-2
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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IXFX150N15HiPerFET Power MOSFETsIXYS Corporation
IXYS Corporation


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