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T1030W डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - (T1020W / T1030W) SNUBBERLESS TRIAC - ST Microelectronics

भाग संख्या T1030W
समारोह (T1020W / T1030W) SNUBBERLESS TRIAC
मैन्युफैक्चरर्स ST Microelectronics 
लोगो ST Microelectronics लोगो 
पूर्व दर्शन
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<?=T1030W?> डेटा पत्रक पीडीएफ

T1030W pdf
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T1020W / 1030W
THERMAL RESISTANCES
Symbol
Rth(j-a)
Rth(j-c)
Parameter
Junction to ambient
Junction to case for A.C (360° conduction angle)
Value
50
3.0
Unit
°C/W
°C/W
GATE CHARACTERISTICS (maximum values)
PG (AV)= 1 W PGM = 10 W (tp = 20 µs) IGM = 4 A (tp = 20 µs)
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Quadrant
T1020 T1030 Unit
IGT VD=12V (DC) RL=33
Tj= 25°C I-II-III MAX 20
30 mA
VGT VD=12V (DC) RL=33
Tj= 25°C I-II-III MAX
1.5
V
VGD
VD=VDRM RL=3.3k
Tj= 125°C I-II-III MIN
0.2
V
tgt VD=VDRM IG = 500mA
dlG/dt= 3Aµs
Tj= 25°C I-II-III TYP
2
µs
IH * IT= 100mA Gate open
Tj= 25°C
MAX 35
50
VTM * ITM= 14A tp= 380µs
Tj= 25°C
MAX
1.5
V
IDRM
IRRM
VDRM rated
VRRM rated
Tj= 25°C
Tj= 125°C
MAX
MAX
10
2
µA
mA
dV/dt * Linear slope up to
Tj= 125°C
VD=67%VDRM Gate open
MIN 200
300 V/µs
(dV/dt)c * (dI/dt)c = 5.3 A/ms (see note) Tj= 125°C
MIN 10
20 V/µs
* For either polarity of electrode A2 voltage with reference to electrode A1.
Note : In usual applications where (dI/dt)c is below 5.3 A/ms, the (dV/dt)c is always lower than 10V/µs, and, therefore, it is unnecessary to use
a snuber R-C network accross T1020W / T1030W triacs.
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