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IRSF3031 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - FULLY PROTECTED POWER MOSFET SWITCH - International Rectifier

भाग संख्या IRSF3031
समारोह FULLY PROTECTED POWER MOSFET SWITCH
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRSF3031?> डेटा पत्रक पीडीएफ

IRSF3031 pdf
IRSF3021
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur.
(TC = 25oC unless otherwise specified.)
Symbol Parameter
Vds, max Continuous drain to source voltage
Vin, max Continuous input voltage
Ids Continuous drain current
Pd Power dissipation
EAS
Vesd1
Vesd2
TJop
TStg
TL
Unclamped single pulse inductive energyÁ
Electrostatic discharge voltage (Human Body Model)
Electrostatic discharge voltage (Machine Model)
Operating junction temperature range
Storage temperature range
Lead temperature (soldering, 10 seconds)
Min. Max. Units
— 50
-0.3 10
V
self limited A
— 30 W
— 3W
— 200 mJ
— 4000 V
— 1000
-55 150
-55 150 oC
— 300
Test Conditions
Tc 25oC, TO220
Tc 25oC, SOT223
100pF, 1.5k
200pF, 0
Static Electrical Characteristics
(TC = 25oC unless otherwise specified.)
Symbol Parameter
Vds,clamp Drain to source clamp voltage
Rds(on) Drain to source on resistance
Idss Drain to source leakage current
Vth Input threshold voltage
Ii,on
Input supply current (Normal Operation)
Ii,off
Input supply current (Protection Mode)
Vin, clamp Input clamp voltage
Vsd Body-drain diode forward drop
Thermal Characteristics
Symbol Parameter
Rthjc
Rthja
Rthjc
Rthja
Junction to case
Junction to ambient
Junction to case
Junction to PCB
Min.
50
1.0
9
Typ.
56
155
2.0
100
250
10
1.5
Max. Units Test Conditions
65 V Ids = 6A, tp = 700 µS
200 mVin = 5V, Ids = 2A
250 µA Vds = 40V, Vin = 0V
3.0 V Vds= Vin, Ids+ Iin= 10mA
300 µA Vin = 5V
500 µA Vin = 5V
V
Iin = 1mA
Ids = -2A, Rin = 1k
Min.
Typ.
Max. Units Test Conditions
4 oC/W TO-220AB
60
40 oC/W SOT-223
60
NOTES:
x When mounted on a 1" square PCB (FR-4 or G10 material). For recommended footprint and soldering techniques,
refer to International Rectifier Application Note AN-994.
y EAS is tested with a constant current source of 6A applied for 700µS with Vin = 0V and starting Tj = 25oC.
z Input current must be limited to less than 5mA with a 1kresistor in series with the input when the Body-Drain Diode is
forward biased.
2 www.irf.com

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