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IRG4IBC30FD डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE - International Rectifier

भाग संख्या IRG4IBC30FD
समारोह INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
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IRG4IBC30FD pdf
IRG4IBC30FD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltageƒ 600
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage –––
VCE(on)
Collector-to-Emitter Saturation Voltage –––
–––
–––
VGE(th)
VGE(th)/TJ
gfe
ICES
Gate Threshold Voltage
3.0
Temperature Coeff. of Threshold Voltage –––
Forward Transconductance „
6.1
Zero Gate Voltage Collector Current –––
–––
VFM Diode Forward Voltage Drop
–––
–––
IGES
Gate-to-Emitter Leakage Current
–––
––– ––– V
0.69 ––– V/°C
1.59 1.8
1.99 ––– V
1.70 –––
––– 6.0
-11 ––– mV/°C
10 ––– S
––– 250 µA
––– 2500
1.4 1.7 V
1.3 1.6
––– ±100 nA
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0mA
IC = 17A
VGE = 15V
IC = 31A
See Fig. 2, 5
IC = 17A, TJ = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 250µA
VCE = 100V, IC = 17A
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 150°C
IC = 12A
See Fig. 13
IC = 12A, TJ = 150°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
2
Total Gate Charge (turn-on)
––– 51 77
Gate - Emitter Charge (turn-on)
––– 7.9 12
Gate - Collector Charge (turn-on)
––– 19 28
Turn-On Delay Time
––– 42 –––
Rise Time
––– 26 –––
Turn-Off Delay Time
––– 230 350
Fall Time
––– 160 230
Turn-On Switching Loss
––– 0.63 –––
Turn-Off Switching Loss
––– 1.39 –––
Total Switching Loss
––– 2.02 3.9
Turn-On Delay Time
––– 42 –––
Rise Time
––– 27 –––
Turn-Off Delay Time
––– 310 –––
Fall Time
––– 310 –––
Total Switching Loss
––– 3.2 –––
Internal Emitter Inductance
––– 7.5 –––
Input Capacitance
––– 1100 –––
Output Capacitance
––– 74 –––
Reverse Transfer Capacitance
––– 14 –––
Diode Reverse Recovery Time
––– 42 60
––– 80 120
Diode Peak Reverse Recovery Current ––– 3.5 6.0
––– 5.6 10
Diode Reverse Recovery Charge
––– 80 180
––– 220 600
Diode Peak Rate of Fall of Recovery ––– 180 –––
During tb
––– 120 –––
IC = 17A
nC VCC = 400V
See Fig. 8
VGE = 15V
TJ = 25°C
ns IC = 17A, VCC = 480V
VGE = 15V, RG = 23
Energy losses include "tail" and
diode reverse recovery.
mJ See Fig. 9, 10, 11, 18
ns
mJ
nH
pF
ns
A
nC
A/µs
TJ = 150°C, See Fig. 9, 10, 11, 18
IC = 17A, VCC = 480V
VGE = 15V, RG = 23
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
VGE = 0V
VCC = 30V
See Fig. 7
ƒ = 1.0MHz
TJ = 25°C See Fig.
TJ = 125°C 14
TJ = 25°C See Fig.
IF = 12A
TJ = 125°C 15
VR = 200V
TJ = 25°C See Fig.
TJ = 125°C
16 di/dt 200A/µs
TJ = 25°C See Fig.
TJ = 125°C 17
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