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IRG4IBC30KD डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE - International Rectifier

भाग संख्या IRG4IBC30KD
समारोह INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRG4IBC30KD pdf
IRG4IBC30KD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown VoltageS
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Saturation Voltage
VGE(th)
VGE(th)/TJ
gfe
ICES
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance T
Zero Gate Voltage Collector Current
VFM Diode Forward Voltage Drop
IGES Gate-to-Emitter Leakage Current
600 — — V VGE = 0V, IC = 250µA
0.54 V/°C VGE = 0V, IC = 1.0mA
2.21 2.7
IC = 16A
VGE = 15V
2.88 V IC = 28A
See Fig. 2, 5
2.36
IC = 16A, TJ = 150°C
3.0 6.0
VCE = VGE, IC = 250µA
-12 mV/°C VCE = VGE, IC = 250µA
5.4 8.1 S VCE = 100V, IC = 16A
— — 250 µA VGE = 0V, VCE = 600V
— — 2500
VGE = 0V, VCE = 600V, TJ = 150°C
1.4 1.7 V IC = 12A
See Fig. 13
1.3 1.6
IC = 12A, TJ = 150°C
— — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tsc
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
Min. Typ. Max. Units
Conditions
67 100
IC = 16A
11 16 nC VCC = 400V
25 37
VGE = 15V
See Fig.8
60
42 ns TJ = 25°C
160 250
IC = 16A, VCC = 480V
80 120
VGE = 15V, RG = 23
0.60
Energy losses include "tail"
0.58 mJ and diode reverse recovery
1.18 1.6
See Fig. 9,10,14
10 — —
58
µs VCC = 360V, TJ = 125°C
VGE = 15V, RG = 10, VCPK < 500V
TJ = 150°C,
See Fig. 10,11,18
42
210
ns IC = 16A, VCC = 480V
VGE = 15V, RG = 23
160
Energy losses include "tail"
1.69 mJ and diode reverse recovery
7.5 nH Measured 5mm from package
920
VGE = 0V
110
27
pF VCC = 30V
ƒ = 1.0MHz
See Fig. 7
42 60 ns TJ = 25°C See Fig.
80 120
TJ = 125°C 14
IF = 12A
3.5 6.0
5.6 10
A TJ = 25°C See Fig.
TJ = 125°C 15
VR = 200V
80 180 nC TJ = 25°C See Fig.
220 600
TJ = 125°C
16 di/dt = 200Aµs
180 A/µs TJ = 25°C See Fig.
160
TJ = 125°C 17
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