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IRG4IBC30WPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

भाग संख्या IRG4IBC30WPBF
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
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IRG4IBC30WPBF pdf
IRG4IBC30WPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
V(BR)ECS
Collector-to-Emitter Breakdown Voltage 600 —
Emitter-to-Collector Breakdown Voltage „ 18 —
V VGE = 0V, IC = 250µA
V VGE = 0V, IC = 1.0A
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage —
0.34 —
2.1 2.7
V/°C VGE = 0V, IC = 1.0mA
IC = 12A
VGE = 15V
VCE(ON)
Collector-to-Emitter Saturation Voltage
— 2.45 —
— 1.95 —
V
IC = 23A
See Fig.2, 5
IC = 12A , TJ = 150°C
VGE(th)
Gate Threshold Voltage
VGE(th)/TJ Temperature Coeff. of Threshold Voltage
gfe Forward Transconductance …
ICES Zero Gate Voltage Collector Current
IGES Gate-to-Emitter Leakage Current
3.0 — 6.0
VCE = VGE, IC = 250µA
— -11 — mV/°C VCE = VGE, IC = 250µA
11 16 —
S VCE = 100 V, IC = 12A
— — 250 µA VGE = 0V, VCE = 600V
— — 2.0
VGE = 0V, VCE = 10V, TJ = 25°C
— — 1000
VGE = 0V, VCE = 600V, TJ = 150°C
— — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
— 51 76
— 7.6 11
— 18 27
IC = 12A
nC VCC = 400V
VGE = 15V
See Fig.8
— 25 —
16 —
99 150
ns
TJ = 25°C
IC = 12A, VCC = 480V
— 67 100
VGE = 15V, RG = 23
— 0.13 —
Energy losses include "tail"
— 0.13 — mJ See Fig. 9, 10, 13, 14
— 0.26 0.35
— 24 —
TJ = 150°C,
— 17 —
— 150 —
ns
IC = 12A, VCC = 480V
VGE = 15V, RG = 23
— 150 —
Energy losses include "tail"
— 0.55 — mJ See Fig. 11,13, 14
— 7.5 — nH Measured 5mm from package
— 980 —
VGE = 0V
— 71 —
— 18 —
pF VCC = 30V
ƒ = 1.0MHz
See Fig. 7
 Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
‚ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 23,
(See fig. 13a)
ƒ Repetitive rating; pulse width limited by maximum
junction temperature.
2
„ Pulse width 80µs; duty factor 0.1%.
… Pulse width 5.0µs, single shot.
† t = 60s, f = 60Hz
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