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IRG4IBC10UD डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE - International Rectifier

भाग संख्या IRG4IBC10UD
समारोह INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRG4IBC10UD pdf
IRG4IBC10UD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage ƒ 600 — — V VGE = 0V, IC = 250µA
DV(BR)CES/DTJ Temperature Coeff. of Breakdown Voltage — 0.54 — V/°C VGE = 0V, IC = 1.0mA
VCE(on)
Collector-to-Emitter Saturation Voltage — 2.15 2.6
IC = 5.0A
VGE = 15V
— 2.61 — V IC = 8.5A
See Fig. 2, 5
— 2.30 —
IC = 5.0A, TJ = 150°C
VGE(th)
Gate Threshold Voltage „
3.0 — 6.0
VCE = VGE, IC = 250µA
DVGE(th)/DTJ Temperature Coeff. of Threshold Voltage — -8.7 — mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance
2.8 4.2 — S VCE = 100V, IC = 5.0A
ICES
Zero Gate Voltage Collector Current
— — 250 µA VGE = 0V, VCE = 600V
— — 1000
VGE = 0V, VCE = 600V, TJ = 150°C
VFM Diode Forward Voltage Drop
— 1.5 1.8 V IC = 4.0A
See Fig. 13
— 1.4 1.7
IC = 4.0A, TJ = 125°C
IGES
Gate-to-Emitter Leakage Current
— — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
Parameter
Min. Typ. Max. Units
Conditions
Total Gate Charge (turn-on)
— 15 22
IC = 5.0A
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
— 2.6 4.0 nC VCC = 400V
— 5.8 8.7
VGE = 15V
See Fig. 8
Turn-On Delay Time
Rise Time
— 40 —
— 16 —
TJ = 25°C
ns IC = 5.0A, VCC = 480V
Turn-Off Delay Time
Fall Time
— 87 130
— 140 210
VGE = 15V, RG = 100W
Energy losses include "tail" and
Turn-On Switching Loss
— 0.14 —
diode reverse recovery.
Turn-Off Switching Loss
— 0.12 — mJ See Fig. 9, 10, 18
Total Switching Loss
— 0.26 0.33
Turn-On Delay Time
— 38 —
TJ = 150°C, See Fig. 11, 18
Rise Time
Turn-Off Delay Time
— 18 —
— 95 —
ns IC = 5.0A, VCC = 480V
VGE = 15V, RG = 100W
Fall Time
— 250 —
Energy losses include "tail" and
Total Switching Loss
— 0.45 — mJ diode reverse recovery.
Internal Emitter Inductance
— 7.5 — nH Measured 5mm from package
Input Capacitance
— 270 —
VGE = 0V
Output Capacitance
Reverse Transfer Capacitance
— 21 —
— 3.5 —
pF VCC = 30V
ƒ = 1.0MHz
See Fig. 7
Diode Reverse Recovery Time
— 28 42
— 38 57
ns TJ = 25°C See Fig.
TJ = 125°C 14
IF = 4.0A
Diode Peak Reverse Recovery Current — 2.9 5.2
— 3.7 6.7
A TJ = 25°C See Fig.
TJ = 125°C 15
VR = 200V
Diode Reverse Recovery Charge
— 40 60 nC TJ = 25°C See Fig.
— 70 105
TJ = 125°C 16 di/dt = 200A/µs
Diode Peak Rate of Fall of Recovery
During tb
— 280 — A/µs TJ = 25°C See Fig.
— 235 —
TJ = 125°C 17
Details of note  through „ are on the last page
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