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IGP03N120H2 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - IGBT - Infineon Technologies

भाग संख्या IGP03N120H2
समारोह IGBT
मैन्युफैक्चरर्स Infineon Technologies 
लोगो Infineon Technologies लोगो 
पूर्व दर्शन
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<?=IGP03N120H2?> डेटा पत्रक पीडीएफ

IGP03N120H2 pdf
IGP03N120H2
IGW03N120H2
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Symbol
Conditions
RthJC
RthJA
PG-TO-220-3-1
PG-TO-247-3
Max. Value
2.0
62
40
Unit
K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
V(BR)CES
VCE(sat)
VGE(th)
ICES
IGES
gfs
Ciss
Coss
Crss
QGate
LE
VGE=0V, IC=300μA
VGE = 15V, IC=3A
Tj=25°C
Tj=150°C
VGE = 10V, IC=3A,
Tj=25°C
IC=90μA,VCE=VGE
VCE=1200V,VGE=0V
Tj=25°C
Tj=150°C
VCE=0V,VGE=20V
VCE=20V, IC=3A
VCE=25V,
VGE=0V,
f=1MHz
VCC=960V, IC=3A
VGE=15V
PG-TO-220-3-1
PG-TO-247-3
min.
1200
-
-
-
2.1
-
-
-
-
-
-
-
-
-
-
Value
Unit
Typ. max.
- -V
2.2 2.8
2.5 -
2.4 -
3 3.9
μA
- 20
- 80
- 100 nA
2 -S
205 - pF
24 -
7-
22 - nC
7 - nH
13 -
Power Semiconductors
2
Rev. 2.6 Febr. 08

विन्यास 13 पेज
डाउनलोड[ IGP03N120H2 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IGP03N120H2IGBTInfineon Technologies
Infineon Technologies


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