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IGP01N120H2 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - IGBT - Infineon Technologies

भाग संख्या IGP01N120H2
समारोह IGBT
मैन्युफैक्चरर्स Infineon Technologies 
लोगो Infineon Technologies लोगो 
पूर्व दर्शन
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<?=IGP01N120H2?> डेटा पत्रक पीडीएफ

IGP01N120H2 pdf
IGP01N120H2
IGD01N120H2
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
SMD version, device on PCB1)
Symbol
RthJC
RthJA
RthJA
Conditions
PG-TO-220-3-1
PG-TO-252-3-1
Max. Value
4.5
62
50
Unit
K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
V(BR)CES
VCE(sat)
VGE(th)
ICES
IGES
gfs
Ciss
Coss
Crss
QGate
LE
VGE=0V, IC=300µA
VGE = 15V, IC=1A
Tj=25°C
Tj=150°C
VGE = 10V, IC=1A,
Tj=25°C
IC=30µA,VCE=VGE
VCE=1200V,VGE=0V
Tj=25°C
Tj=150°C
VCE=0V,VGE=20V
VCE=20V, IC=1A
VCE=25V,
VGE=0V,
f=1MHz
VCC=960V, IC=1A
VGE=15V
min.
1200
-
-
-
2.1
-
-
-
-
-
-
-
-
-
Value
Unit
Typ. max.
- -V
2.2 2.8
2.5 -
2.4 -
3 3.9
µA
- 20
- 80
- 40 nA
0.75 - S
91.6
- pF
9.8 -
3.4 -
8.6 - nC
7 - nH
1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for
collector connection. PCB is vertical without blown air.
Power Semiconductors
2
Rev. 2.4 Sept. 07

विन्यास 13 पेज
डाउनलोड[ IGP01N120H2 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IGP01N120H2IGBTInfineon Technologies
Infineon Technologies


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