DataSheet.in

IRG4BC20W डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - IRF

भाग संख्या IRG4BC20W
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स IRF 
लोगो IRF लोगो 
पूर्व दर्शन
1 Page
		
<?=IRG4BC20W?> डेटा पत्रक पीडीएफ

IRG4BC20W pdf
IRG4BC20W
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
V(BR)ECS
V(BR)CES/TJ
VCE(ON)
VGE(th)
VGE(th)/TJ
gfe
ICES
IGES
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage T
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance U
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Min.
600
18
3.0
5.5
Typ. Max. Units
Conditions
— — V VGE = 0V, IC = 250µA
— — V VGE = 0V, IC = 1.0A
0.48 V/°C VGE = 0V, IC = 1.0mA
2.16 2.6
IC = 6.5A
VGE = 15V
2.55 V IC = 13A
See Fig.2, 5
2.05
IC = 6.5A , TJ = 150°C
6.0
VCE = VGE, IC = 250µA
-8.8 mV/°C VCE = VGE, IC = 250µA
8.3 S VCE = 100 V, IC = 6.5A
250 µA VGE = 0V, VCE = 600V
2.0
VGE = 0V, VCE = 10V, TJ = 25°C
1000
VGE = 0V, VCE = 600V, TJ = 150°C
±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
Typ.
26
3.7
10
22
14
110
64
0.06
0.08
0.14
21
15
150
150
0.34
7.5
490
38
8.8
Max.
38
5.5
15
160
96
0.2
Units
nC
ns
mJ
ns
mJ
nH
pF
Conditions
IC = 6.5A
VCC = 400V
See Fig.8
VGE = 15V
TJ = 25°C
IC = 6.5A, VCC = 480V
VGE = 15V, RG = 50
Energy losses include "tail"
See Fig. 9, 10, 14
TJ = 150°C,
IC = 6.5A, VCC = 480V
VGE = 15V, RG = 50
Energy losses include "tail"
See Fig. 10, 11, 14
Measured 5mm from package
VGE = 0V
VCC = 30V
See Fig. 7
ƒ = 1.0MHz
Q Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 50,
(See fig. 13a)
S Repetitive rating; pulse width limited by maximum
junction temperature.
T Pulse width 80µs; duty factor 0.1%.
U Pulse width 5.0µs, single shot.
2 www.irf.com

विन्यास 8 पेज
डाउनलोड[ IRG4BC20W Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IRG4BC20FINSULATED GATE BIPOLAR TRANSISTORIRF
IRF
IRG4BC20FDINSULATED GATE BIPOLAR TRANSISTORIRF
IRF


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English