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IRGPH40MD2 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - IRF

भाग संख्या IRGPH40MD2
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स IRF 
लोगो IRF लोगो 
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IRGPH40MD2
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 1200 — — V VGE = 0V, IC = 250µA
V(BR)CES/TJ Temp. Coeff. of Breakdown Voltage
— 1.1 — V/°C VGE = 0V, IC = 1.0mA
VCE(on)
Collector-to-Emitter Saturation Voltage — 2.3 3.4
IC = 18A
VGE = 15V
— 3.0 —
— 2.8 —
V IC = 31A
IC = 18A, T J = 150°C
VGE(th)
Gate Threshold Voltage
VGE(th)/TJ Temp. Coeff. of Threshold Voltage
3.0 — 5.5
VCE = VGE, IC = 250µA
— -14 — mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance
4.0 10 — S VCE = 100V, I C = 18A
ICES
Zero Gate Voltage Collector Current
— — 250 µA VGE = 0V, VCE = 1200V
VFM Diode Forward Voltage Drop
— — 3500
— 2.6 3.3 V
VGE = 0V, VCE = 1200V, T J = 150°C
IC = 8A
— 2.3 3.0
IC = 8A, TJ = 150°C
IGES Gate-to-Emitter Leakage Current
— — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg Total Gate Charge (turn-on)
— 50 75
IC = 18A
Qge Gate - Emitter Charge (turn-on)
Qgc Gate - Collector Charge (turn-on)
— 11 21
— 15 30
nC VCC = 400V
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
— 67 —
— 89 —
— 340 930
— 510 930
TJ = 25°C
ns IC = 18A, VCC =800V
VGE = 15V, R G = 10
Energy losses include "tail" and
Eon Turn-On Switching Loss
Eoff Turn-Off Switching Loss
— 2.1 —
— 5.9 —
diode reverse recovery.
mJ
Ets
tsc
td(on)
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
— 8.0 13
10 — —
— 64 —
µs VCC = 720V, T J = 125°C
VGE = 15V, R G = 10, VCPK < 1000V
TJ = 150°C,
tr
td(off)
Rise Time
Turn-Off Delay Time
— 74 —
— 550 —
ns IC = 18A, VCC = 800V
VGE = 15V, R G = 10
tf Fall Time
Ets Total Switching Loss
— 1200 —
— 16 —
Energy losses include "tail" and
mJ diode reverse recovery.
LE Internal Emitter Inductance
Cies Input Capacitance
— 13 —
— 1400 —
nH Measured 5mm from package
VGE = 0V
Coes
Cres
Output Capacitance
Reverse Transfer Capacitance
— 100 —
— 15 —
pF VCC = 30V
ƒ = 1.0MHz
trr Diode Reverse Recovery Time
— 63 95
— 106 160
ns TJ = 25°C
TJ = 125°C
IF = 8A
Irr Diode Peak Reverse Recovery Current — 4.5 8.0 A TJ = 25°C
— 6.2 11
TJ = 125°C
V R = 200V
Qrr Diode Reverse Recovery Charge — 140 380 nC TJ = 25°C
— 335 880
TJ = 125°C
di/dt = 200A/µs
di(rec)M/dt Diode Peak Rate of Fall of Recovery
— 133 — A/µs TJ = 25°C
During tb
— 85 —
TJ = 125°C
Notes: Repetitive rating; V GE=20V, pulse width
limited by max. junction temperature.
VCC=80%(VCES), VGE=20V, L=10µH,
RG= 10
Pulse width 5.0µs,
single shot.
Pulse width 80µs; duty factor 0.1%.
Refer to Section D - page D-13 for Package Outline 3 - JEDEC Outline TO-247AC
C-480
To Order

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