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IRGPH40S डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - IRF

भाग संख्या IRGPH40S
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स IRF 
लोगो IRF लोगो 
पूर्व दर्शन
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IRGPH40S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
V(BR)ECS
V(BR)CES/TJ
VCE(on)
VGE(th)
VGE(th)/TJ
gfe
ICES
IGES
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Min.
1200
20
3.0
Typ. Max. Units
—— V
—— V
1.3 — V/°C
2.5 3.0
2.9 — V
2.8 —
— 5.5
-12 — mV/°C
12 — S
— 250 µA
— 1000
— ±100 nA
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
VGE = 0V, IC = 1.0mA
IC = 20A
VGE = 15V
IC = 33A
IC = 20A, TJ = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 250µA
VCE = 100V, IC = 20A
VGE = 0V, VCE = 1200V
VGE = 0V, VCE = 1200V, TJ = 150°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
— 50 —
IC = 20A
— 14 — nC VCC = 400V
— 12 —
VGE = 15V
— 30 —
TJ = 25°C
— 22 —
— 1400 —
ns IC = 20A, VCC = 960V
VGE = 15V, RG = 10
— 680 —
Energy losses include "tail"
— 1.4 —
— 20 — mJ
— 21.4 —
— 28 —
TJ = 150°C,
— 27 —
— 1300 —
ns IC = 20A, VCC = 960V
VGE = 15V, RG = 10
— 2100 —
Energy losses include "tail"
— 50 — mJ
— 13 — nH Measured 5mm from package
— 1650 —
VGE = 0V
— 73 — pF VCC = 30V
— 14 —
ƒ = 1.0MHz
Repetitive rating; VGE=20V, pulse width
limited by max. junction temperature.
Repetitive rating; pulse width limited
by maximum junction temperature.
Pulse width 5.0µs,
single shot.
VCC=80%(VCES), VGE=20V, L=10µH,
RG= 10
Pulse width 80µs; duty factor 0.1%.
Refer to Section D - page D-13
Package Outline 3 - JEDEC Outline TO-247AC (TO-3P)
C-48
To Order

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डाउनलोड[ IRGPH40S Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IRGPH40INSULATED GATE BIPOLAR TRANSISTORIRF
IRF
IRGPH40FINSULATED GATE BIPOLAR TRANSISTORIRF
IRF


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