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IRGPH50FD2 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - IRF

भाग संख्या IRGPH50FD2
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स IRF 
लोगो IRF लोगो 
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IRGPH50FD2
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 1200 — — V VGE = 0V, IC = 250µA
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage — 1.1 — V/°C VGE = 0V, IC = 1.0mA
VCE(on)
Collector-to-Emitter Saturation Voltage — 2.1 2.9
IC = 25A
VGE = 15V
— 2.5 — V IC = 45A
See Fig. 2, 5
— 3.0 —
IC = 25A, T J = 150°C
VGE(th)
Gate Threshold Voltage
3.0 — 5.5
VCE = VGE, IC = 250µA
VGE(th)/TJ Temperature Coeff. of Threshold Voltage — -14 — mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance
7.5 17 — S VCE = 100V, I C = 25A
ICES
Zero Gate Voltage Collector Current
— — 250 µA VGE = 0V, VCE = 1200V
— — 6500
VGE = 0V, VCE = 1200V, T J = 150°C
VFM Diode Forward Voltage Drop
— 2.5 3.0 V IC = 16A
See Fig. 13
— 2.1 2.5
IC = 16A, T J = 150°C
IGES Gate-to-Emitter Leakage Current
— — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Irr Diode Peak Reverse Recovery Current
Qrr Diode Reverse Recovery Charge
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
— 82 100
IC = 25A
— 16 21 nC VCC = 400V
— 30 43
See Fig. 8
— 77 —
TJ = 25°C
— 75 —
— 360 540
ns IC = 25A, VCC = 800V
VGE = 15V, R G = 5.0
— 320 470
Energy losses include "tail" and
— 3.2 —
diode reverse recovery.
— 5.8 — mJ See Fig. 9, 10, 11, 18
— 9.0 13.5
— 70 —
TJ = 150°C, See Fig. 9, 10, 11, 18
— 70 —
— 660 —
ns IC = 25A, VCC = 800V
VGE = 15V, R G = 5.0
— 640 —
Energy losses include "tail" and
— 16.2 — mJ diode reverse recovery.
— 13 — nH Measured 5mm from package
— 2400 —
VGE = 0V
— 140 — pF VCC = 30V
See Fig. 7
— 28 —
ƒ = 1.0MHz
— 90 135 ns TJ = 25°C See Fig.
— 164 245
TJ = 125°C
14
IF = 16A
— 5.8 10 A TJ = 25°C See Fig.
— 8.3 15
TJ = 125°C
15
V R = 200V
— 260 675 nC TJ = 25°C See Fig.
— 680 1838
TJ = 125°C 16 di/dt = 200A/µs
— 120 — A/µs TJ = 25°C See Fig.
— 76 —
TJ = 125°C 17
Notes:
Repetitive rating; V GE=20V, pulse width
limited by max. junction temperature.
( See fig. 20 )
VCC=80%(VCES), VGE=20V, L=10µH,
RG= 5.0, ( See fig. 19 )
Pulse width 80µs; duty factor 0.1%.
Pulse width 5.0µs,
single shot.
C-294
To Order

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