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IRGPH50M डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - IRF

भाग संख्या IRGPH50M
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स IRF 
लोगो IRF लोगो 
पूर्व दर्शन
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IRGPH50M
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)CES
V(BR)ECS
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
V(BR)CES/TJ Temp. Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Saturation Voltage
VGE(th)
Gate Threshold Voltage
VGE(th)/TJ Temp. Coeff. of Threshold Voltage
gfe Forward Transconductance
ICES Zero Gate Voltage Collector Current
IGES Gate-to-Emitter Leakage Current
Min. Typ. Max. Units
Conditions
1200 — — V VGE = 0V, IC = 250µA
20 — — V VGE = 0V, IC = 1.0A
— 1.1 — V/°C VGE = 0V, IC = 1.0mA
— 2.3 2.9
IC = 23A
VGE = 15V
— 3.0 — V IC = 42A
See Fig. 2, 5
— 2.8 —
IC = 23A, T J = 150°C
3.0 — 5.5
VCE = VGE, IC = 250µA
— -13 — mV/°C VCE = VGE, IC = 250µA
11 15 — S VCE = 100V, I C = 23A
— — 250 µA VGE = 0V, VCE = 1200V
— — 2000
VGE = 0V, VCE = 1200V, T J = 150°C
— — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tsc
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
— 89 130
IC = 23A
— 22 33
— 26 39
nC VCC = 400V
VGE = 15V
See Fig. 8
— 42 —
— 32 —
— 280 820
— 190 410
TJ = 25°C
ns IC = 23A, VCC = 960V
VGE = 15V, R G = 5.0
Energy losses include "tail"
— 1.6 —
— 3.3 — mJ See Fig. 9, 10, 11, 14
— 4.9 11
10 — —
— 32 —
µs VCC = 720V, T J = 125°C
VGE = 15V, R G = 5.0, VCPK < 1000V
TJ = 150°C,
— 21 —
— 490 —
ns IC = 23A, VCC = 960V
VGE = 15V, R G = 5.0
— 440 —
Energy losses include "tail"
— 10 — mJ See Fig. 10, 14
— 13 — nH Measured 5mm from package
— 1900 —
VGE = 0V
— 140 —
— 24 —
pF VCC = 30V
ƒ = 1.0MHz
See Fig. 7
Notes:
Repetitive rating; V GE=20V, pulse width
limited by max. junction temperature.
( See fig. 13b )
VCC=80%(VCES), VGE=20V, L=10µH,
RG= 5.0, ( See fig. 13a )
Repetitive rating; pulse width limited
by maximum junction temperature.
Pulse width 80µs; duty factor 0.1%.
Pulse width 5.0µs,
single shot.
C-472
To Order

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