DataSheet.in

IRGPH50MD2 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - IRF

भाग संख्या IRGPH50MD2
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स IRF 
लोगो IRF लोगो 
पूर्व दर्शन
1 Page
		
<?=IRGPH50MD2?> डेटा पत्रक पीडीएफ

IRGPH50MD2 pdf
Previous Datasheet
Index
Next Data Sheet
IRGPH50MD2
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 1200 — — V VGE = 0V, I C = 250µA
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Saturation Voltage
— 1.1 — V/°C VGE = 0V, IC = 1.0mA
— 2.3 2.9
IC = 23A
V GE = 15V
— 3.0 — V IC = 42A
See Fig. 2, 5
— 2.8 —
IC = 23A, T J = 150°C
VGE(th)
Gate Threshold Voltage
VGE(th)/TJ Temperature Coeff. of Threshold Voltage
3.0 — 5.5
VCE = VGE, IC = 250µA
— -13 — mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance
11 15 — S VCE = 100V, I C = 23A
ICES
Zero Gate Voltage Collector Current
— — 250 µA VGE = 0V, V CE = 1200V
VFM Diode Forward Voltage Drop
— — 6500
— 2.5 3.0 V
VGE = 0V, V CE =1200V, T J = 150°C
IC = 16A
See Fig. 13
— 2.1 2.5
IC = 16A, T J = 150°C
IGES Gate-to-Emitter Leakage Current
— — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tsc
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Irr Diode Peak Reverse Recovery Charge
Qrr Diode Reverse Recovery Charge
di(rec)M/dt
Notes:
Diode Peak Rate of Fall of Recovery
During t b
Repetitive rating; V GE=20V, pulse width limited
by max. junction temperature. ( See fig. 20 )
Min. Typ. Max. Units
Conditions
— 89 130
IC = 23A
— 22 33 nC VCC = 400V
— 26 39
See Fig. 8
— 100 —
TJ = 25°C
— 140 —
— 510 770
ns IC = 23A, V CC = 960V
VGE = 15V, R G = 5.0
— 470 730
Energy losses include "tail" and
— 3.0 —
diode reverse recovery.
— 8.0 — mJ See Fig. 9, 10, 11, 18
— 11 17
10 — —
— 86 —
µs VCC = 720V, T J = 125°C
VGE = 15V, R G = 5.0
TJ = 150°C, See Fig. 9, 10, 11, 18
— 130 —
— 800 —
ns IC = 23A, V CC = 960V
VGE = 15V, R G = 5.0
— 920 —
Energy losses include "tail" and
— 20 — mJ diode reverse recovery
— 13 — nH Measured 5mm from package
— 1900 —
VGE = 0V
— 140 —
— 24 —
pF VCC = 30V
ƒ = 1.0MHz
See Fig. 7
— 90 135
— 164 245
ns TJ = 25°C See Fig.
TJ = 125°C
14
I F = 16A
— 5.8 10
— 8.3 15
A TJ = 25°C See Fig.
TJ = 125°C
15
V R = 200V
— 260 675 nC TJ = 25°C See Fig.
— 680 1838
TJ = 125°C 16 di/dt = 200A/µs
— 120 — A/µs TJ = 25°C See Fig.
— 76 —
TJ = 125°C 17
VCC=80%(V CES), VGE=20V, L=10µH,
RG= 5.0, ( See fig. 19 )
Pulse width 5.0µs,
single shot.
Pulse width 80µs; duty factor 0.1%.
C-482
To Order

विन्यास 8 पेज
डाउनलोड[ IRGPH50MD2 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IRGPH50MD2INSULATED GATE BIPOLAR TRANSISTORIRF
IRF


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English