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IRGPS40B120U डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - IRF

भाग संख्या IRGPS40B120U
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स IRF 
लोगो IRF लोगो 
पूर्व दर्शन
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<?=IRGPS40B120U?> डेटा पत्रक पीडीएफ

IRGPS40B120U pdf
IRGPS40B120U
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Ref.Fig.
V(BR)CES Collector-to-Emitter Breakdown Voltage 1200 ––– ––– V VGE = 0V, IC = 500µA
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage ––– 0.40 ––– V/°C VGE = 0V, IC = 1.0mA, (25°C-125°C)
VCE(on)
Collector-to-Emitter Saturation Voltage ––– 3.12 3.40
IC = 40A
VGE = 15V
5, 6
––– 3.39 3.71 V IC = 50A
7, 9
––– 3.88 4.39
IC = 40A, TJ = 125°C
10
VGE(th)
VGE(th)/TJ
–––
Gate Threshold Voltage
4.0
Temperature Coeff. of Threshold Voltage –––
4.24 4.79
IC = 50A, TJ = 125°C
11
5.0 6.0
VCE = VGE, IC = 250µA
8, 9
-12 ––– mV/°C VCE = VGE, IC = 1.0mA, (25°C-125°C) 10 ,11
gfe Forward Transconductance
––– 30.5 ––– S VCE = 50V, IC = 40A, PW=80µs
ICES
Zero Gate Voltage Collector Current
––– ––– 500 µA VGE = 0V, VCE = 1200V
––– 100 1200
VGE = 0V, VCE = 1200V, TJ = 125°C
IGES Gate-to-Emitter Leakage Current ––– ––– ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qge
Qgc
Eon
Eoff
Etot
Eon
Eoff
Etot
td(on)
tr
td(off)
tf
Cies
Coes
Cres
RBSOA
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operting Area
SCSOA
Short Circuit Safe Operting Area
––– 340 510
IC = 40A
––– 43 65 nC VCC = 600V
––– 165 248
VGE = 15V
––– 1400 1750 µJ IC = 40A, VCC = 600V
––– 1650 2050
VGE = 15V,RG = 4.7Ω, L =200µH
––– 3050 3800
Ls = 150nH
TJ = 25°C
––– 1950 2300
TJ = 125°C
––– 2200 2950 µJ Energy losses include "tail" and
––– 4150 5250
diode reverse recovery.
––– 76 99
––– 39 55
––– 332 365
IC = 40A, VCC = 600V
VGE = 15V, RG = 4.7L =200µH
ns Ls = 150nH, TJ = 125°C
––– 25 33
––– 4300 –––
VGE = 0V
––– 270 ––– pF VCC = 30V
––– 160 –––
f = 1.0MHz
FULL SQUARE
10 ––– –––
TJ = 150°C, IC = 160A, Vp =1200V
VCC = 1000V, VGE = +15V to 0V
RG = 4.7
TJ = 150°C, Vp =1200V
µs VCC = 900V, VGE = +15V to 0V,
RG = 4.7
Ref.Fig.
17
CT1
CT4
WF1
WF2
12,14
13, 15
CT4
WF1
WF2
16
4
CT3
WF4
2 www.irf.com

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