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IRGPS60B120KD डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - IRF

भाग संख्या IRGPS60B120KD
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स IRF 
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IRGPS60B120KD pdf
IRGPS60B120KD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Ref.Fig.
V(BR)CES
V(BR)CES/TJ
VCE(on)
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
1200 –––
––– 0.40
––– 2.33
––– 2.50
–––
–––
2.50
2.75
V
V/°C
V
VGE = 0V, IC = 500µA
VGE = 0V, IC = 1.0mA, (25°C-125°C)
IC = 50A
VGE = 15V
IC = 60A
5, 6
7, 9
VGE(th)
VGE(th)/TJ
–––
–––
Gate Threshold Voltage
4.0
Temperature Coeff. of Threshold Voltage –––
2.79
3.04
5.0
-12
3.1 IC = 50A, TJ = 125°C
10
3.5 IC = 60A, TJ = 125°C
11
6.0 VCE = VGE, IC = 250µA
9,10
––– mV/°C VCE = VGE, IC = 1.0mA, (25°C-125°C) 11 ,12
gfe Forward Transconductance
––– 34.4 ––– S VCE = 50V, IC = 60A, PW=80µs
ICES
Zero Gate Voltage Collector Current
––– ––– 500 µA VGE = 0V, VCE = 1200V
VFM Diode Forward Voltage Drop
––– 650 1350
––– 1.82 2.10
––– 1.93 2.20
––– 1.96 2.20
V
VGE = 0V, VCE = 1200V, TJ = 125°C
IC = 50A
IC = 60A
IC = 50A, TJ = 125°C
8
––– 2.13 2.40
IC = 60A, TJ = 125°C
IGES Gate-to-Emitter Leakage Current ––– ––– ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Ref.Fig.
Qg
Qge
Qgc
Eon
Eoff
Etot
Eon
Eoff
Etot
td(on)
tr
td(off)
tf
Cies
Coes
Cres
RBSOA
SCSOA
Erec
trr
Irr
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operting Area
Short Circuit Safe Operting Area
Reverse Recovery energy of the diode
Diode Reverse Recovery time
Diode Peak Reverse Recovery Current
––– 340 510
––– 40 60
––– 165 248
––– 3214 4870
––– 4783 5450
––– 8000 10320
––– 5032 6890
––– 7457 8385
––– 12500 15275
––– 72 94
––– 32 45
––– 366 400
––– 45 58
––– 4300 –––
––– 395 –––
––– 160 –––
nC
µJ
µJ
ns
pF
FULL SQUARE
10 ––– ––– µs
––– 3346 –––
––– 180 –––
––– 50 –––
µJ
ns
A
IC = 60A
VCC = 600V
VGE = 15V
IC = 60A, VCC = 600V
VGE = 15V,RG = 4.7Ω, L =200µH
Ls = 150nH
TJ = 25°C
TJ = 125°C
Energy losses include "tail" and
diode reverse recovery.
IC = 15A, VCC = 600V
VGE = 15V, RG = 4.7L =200µH
Ls = 150nH, TJ = 125°C
VGE = 0V
VCC = 30V
f = 1.0MHz
TJ = 150°C, IC = 240A, Vp =1200V
VCC = 1000V, VGE = +15V to 0V
RG = 4.7
TJ = 150°C, Vp =1200V
VCC = 900V, VGE = +15V to 0V,
RG = 4.7
TJ = 125°C
VCC = 600V, IF = 60A, L =200µH
VGE = 15V,RG = 4.7Ω, Ls = 150nH
23
CT1
CT4
WF1
WF2
13,15
14, 16
CT4
WF1
WF2
22
4
CT2
CT3
WF4
17,18,19
20, 21
CT4,WF3
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