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IRGPC50FD2 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - IRF

भाग संख्या IRGPC50FD2
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स IRF 
लोगो IRF लोगो 
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IRGPC50FD2
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA
V(BR)CES/TJ Temp. Coeff. of Breakdown Voltage
— 0.62 — V/°C VGE = 0V, IC = 1.0mA
VCE(on)
Collector-to-Emitter Saturation Voltage
— 1.6 1.7
IC = 39A
VGE = 15V
— 2.0 — V IC = 70A
See Fig. 2, 5
— 1.7 —
IC = 39A, TJ = 150°C
VGE(th)
Gate Threshold Voltage
3.0 — 5.5
VCE = VGE, IC = 250µA
VGE(th)/TJ Temperature Coeff. of Threshold Voltage — -14 — mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance
21 24 — S VCE = 100V, IC = 39A
ICES
Zero Gate Voltage Collector Current
— — 250 µA VGE = 0V, VCE = 600V
— — 6500
VGE = 0V, VCE = 600V, TJ = 150°C
VFM Diode Forward Voltage Drop
— 1.3 1.7 V IC = 25A
See Fig. 13
— 1.2 1.5
IC = 25A, TJ = 150°C
IGES Gate-to-Emitter Leakage Current
— — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Irr Diode Peak Reverse Recovery Current
Qrr Diode Reverse Recovery Charge
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
— 110 170
IC = 39A
— 20 30 nC VCC = 400V
— 50 75
See Fig. 8
— 70 —
TJ = 25°C
— 110 — ns IC = 39A, VCC = 480V
— 400 600
VGE = 15V, RG = 5.0
— 290 400
Energy losses include "tail" and
— 2.5 —
diode reverse recovery.
— 6.0 — mJ See Fig. 9, 10, 11, 18
— 8.5 13
— 68 —
TJ = 150°C, See Fig. 9, 10, 11, 18
— 100 —
— 760 —
ns IC = 39A, VCC = 480V
VGE = 15V, RG = 5.0
— 520 —
Energy losses include "tail" and
— 14 — mJ diode reverse recovery.
— 13 — nH Measured 5mm from package
— 3000 —
VGE = 0V
— 340 — pF VCC = 30V
See Fig. 7
— 40 —
ƒ = 1.0MHz
— 50 75 ns TJ = 25°C See Fig.
— 105 160
TJ = 125°C
14
IF = 25A
— 4.5 10 A TJ = 25°C See Fig.
— 8.0 15
TJ = 125°C
15
V R = 200V
— 112 375 nC TJ = 25°C See Fig.
— 420 1200
TJ = 125°C 16 di/dt = 200A/µs
— 250 — A/µs TJ = 25°C See Fig.
— 160 —
TJ = 125°C 17
Notes:
Repetitive rating; VGE=20V, pulse width
limited by max. junction temperature.
( See fig. 20 )
VCC=80%(VCES), VGE=20V, L=10µH,
RG= 5.0, ( See fig. 19 )
Pulse width 80µs; duty factor 0.1%.
Pulse width 5.0µs,
single shot.
C-126
To Order

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