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IRGPC50UD2 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - IRF

भाग संख्या IRGPC50UD2
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स IRF 
लोगो IRF लोगो 
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IRGPC50UD2
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
V(BR)CES/TJ
VCE(on)
Collector-to-Emitter Breakdown Voltage
Temp. Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
VGE(th)
VGE(th)/TJ
gfe
ICES
Gate Threshold Voltage
Temp. Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
VFM Diode Forward Voltage Drop
IGES Gate-to-Emitter Leakage Current
600 — — V VGE = 0V, IC = 250µA
— 0.60 — V/°C VGE = 0V, IC = 1.0mA
— 1.9 3.0
IC = 27A
VGE = 15V
— 2.4 — V IC = 55A
See Fig. 2, 5
— 1.9 —
IC = 27A, T J = 150°C
3.0 — 5.5
VCE = VGE, IC = 250µA
— -13 — mV/°C VCE = VGE, IC = 250µA
16 24 — S VCE = 100V, I C = 27A
— — 250 µA VGE = 0V, VCE = 600V
— — 6500
VGE = 0V, VCE = 600V, T J = 150°C
— 1.3 1.7 V IC = 25A
See Fig. 13
— 1.2 1.5
IC = 25A, T J = 150°C
— — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Irr Diode Peak Reverse Recovery Current
Qrr Diode Reverse Recovery Charge
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
— 110 140
IC = 27A
— 17 21 nC VCC = 400V
— 53 70
See Fig. 8
— 73 —
TJ = 25°C
— 71 —
— 210 320
ns IC = 27A, VCC = 480V
VGE = 15V, R G = 5.0
— 150 280
Energy losses include "tail" and
— 1.4 —
diode reverse recovery.
— 1.6 — mJ See Fig. 9, 10, 11, 18
— 3.0 4.5
— 73 —
TJ = 150°C, See Fig. 9, 10, 11, 18
— 67 —
— 360 —
ns IC = 27A, VCC = 480V
VGE = 15V, R G = 5.0
— 230 —
Energy losses include "tail" and
— 4.5 — mJ diode reverse recovery.
— 13 — nH Measured 5mm from package
— 2900 —
VGE = 0V
— 330 — pF VCC = 30V
See Fig. 7
— 40 —
ƒ = 1.0MHz
— 50 75 ns TJ = 25°C See Fig.
— 105 160
TJ = 125°C
14
IF = 25A
— 4.5 10 A TJ = 25°C See Fig.
— 8.0 15
TJ = 125°C
15
V R = 200V
— 112 375 nC TJ = 25°C See Fig.
— 420 1200
TJ = 125°C 16 di/dt = 200A/µs
— 250 — A/µs TJ = 25°C See Fig.
— 160 —
TJ = 125°C 17
Notes:
Repetitive rating; V GE=20V, pulse width
limited by max. junction temperature.
( See fig. 20 )
VCC=80%(VCES), VGE=20V, L=10µH,
RG= 5.0, ( See fig. 19 )
Pulse width 80µs; duty factor 0.1%.
Pulse width 5.0µs,
single shot.
C-726
To Order

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