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IRGPF40F डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - IRF

भाग संख्या IRGPF40F
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स IRF 
लोगो IRF लोगो 
पूर्व दर्शन
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IRGPF40F
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)CES
V(BR)ECS
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Saturation Voltage
VGE(th)
Gate Threshold Voltage
VGE(th)/TJ Temperature Coeff. of Threshold Voltage
gfe Forward Transconductance
ICES Zero Gate Voltage Collector Current
IGES Gate-to-Emitter Leakage Current
Min. Typ. Max. Units
Conditions
900 — — V VGE = 0V, IC = 250µA
20 — — V VGE = 0V, IC = 1.0A
— 0.80 — V/°C VGE = 0V, IC = 1.0mA
— 2.5 3.3
IC = 17A
VGE = 15V
— 3.2 — V IC = 31A
See Fig. 2, 5
— 2.9 —
IC = 17A, T J = 150°C
3.0 — 5.5
VCE = VGE, IC = 250µA
— -12 — mV/°C VCE = VGE, IC = 250µA
5.2 13 — S VCE = 100V, I C = 17A
— — 250 µA VGE = 0V, VCE = 900V
— — 1000
VGE = 0V, VCE = 900V, T J = 150°C
— — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
— 45 68
IC = 17A
— 8.7 13
— 15 23
nC VCC = 400V
VGE = 15V
See Fig. 8
— 28 —
TJ = 25°C
— 12 —
— 170 320
ns IC = 17A, VCC = 720V
VGE = 15V, R G = 10
— 110 300
Energy losses include "tail"
— 0.52 —
— 1.05 — mJ See Fig. 9, 10, 11, 14
— 1.57 3.1
— 27 —
— 14 —
— 250 —
— 240 —
TJ = 150°C,
ns IC = 17A, VCC = 720V
VGE = 15V, R G = 10
Energy losses include "tail"
— 3.0 — mJ See Fig. 10, 14
— 13 — nH Measured 5mm from package
— 1200 —
— 91 —
VGE = 0V
pF VCC = 30V
See Fig. 7
— 15 —
ƒ = 1.0MHz
Notes:
Repetitive rating; V GE=20V, pulse width
limited by max. junction temperature.
( See fig. 13b )
VCC=80%(VCES), VGE=20V, L=10µH,
RG= 10, ( See fig. 13a )
Repetitive rating; pulse width limited
by maximum junction temperature.
Pulse width 80µs; duty factor 0.1%.
Pulse width 5.0µs,
single shot.
C-262
To Order

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अनुशंसा डेटापत्रक

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IRGPF40FINSULATED GATE BIPOLAR TRANSISTORIRF
IRF


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