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IRGPF50F डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - INSULATED GATE BIPOLAR TRANSISTOR - IRF

भाग संख्या IRGPF50F
समारोह INSULATED GATE BIPOLAR TRANSISTOR
मैन्युफैक्चरर्स IRF 
लोगो IRF लोगो 
पूर्व दर्शन
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IRGPF50F
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)CES Collector-to-Emitter Breakdown Voltage
V(BR)ECS Emitter-to-Collector Breakdown Voltage
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Saturation Voltage
VGE(th)
Gate Threshold Voltage
VGE(th)/TJ Temperature Coeff. of Threshold Voltage
gfe Forward Transconductance
ICES Zero Gate Voltage Collector Current
IGES Gate-to-Emitter Leakage Current
Min. Typ. Max. Units
Conditions
900 ---- ---- V VGE = 0V, IC = 250µA
20 ---- ---- V VGE = 0V, IC = 1.0A
---- 0.74 ---- V/°C VGE = 0V, IC = 1.0mA
---- 2.1 2.7
IC = 28A
VGE = 15V
---- 2.7 ---- V IC = 51A
See Fig. 2, 5
---- 2.4 ----
IC = 28A, T J = 150°C
3.0 ---- 5.5
VCE = VGE, IC = 250µA
---- -9.7 ---- mV/°C VCE = VGE, IC = 250µA
12 18 ---- S VCE = 100V, I C = 28A
---- ---- 250 µA VGE = 0V, VCE = 900V
---- ---- 2000
VGE = 0V, VCE = 900V, T J = 150°C
---- ---- ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
---- 81 120
IC = 28A
---- 16 24 nC VCC = 400V
See Fig. 8
---- 29 44
---- 32 ----
VGE = 15V
TJ = 25°C
---- 22 ----
---- 200 280
ns IC = 28A, VCC = 720V
VGE = 15V, R G = 5.0
---- 130 180
Energy losses include "tail"
---- 1.1 ----
---- 1.8 ---- mJ See Fig. 9, 10, 11, 14
---- 2.9 4.1
---- 32 ----
---- 20 ----
---- 480 ----
---- 450 ----
TJ = 150°C,
ns IC = 28A, VCC = 720V
VGE = 15V, R G = 5.0
Energy losses include "tail"
---- 5.7 ---- mJ See Fig. 10, 14
---- 13 ---- nH Measured 5mm from package
---- 2300 ----
---- 180 ----
VGE = 0V
pF VCC = 30V
See Fig. 7
---- 27 ----
ƒ = 1.0MHz
Notes:
Repetitive rating; V GE=20V, pulse width
limited by max. junction temperature.
( See fig. 13b )
VCC=80%(VCES), VGE=20V, L=10µH,
RG= 5.0, ( See fig. 13a )
Repetitive rating; pulse width limited
by maximum junction temperature.
Pulse width 80µs; duty factor 0.1%.
Pulse width 5.0µs,
single shot.
C-268
To Order

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